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Light-intensity and temperature dependence of trap-dangling bond recombination in hydrogenated microcrystalline silicon

Published online by Cambridge University Press:  01 February 2011

Christoph Boehme  and
Klaus Lips
Christoph Boehme
Affiliation:
Hahn-Meitner-Institut, Kekuléstrasse 5, 12489 Berlin, Germany
Klaus Lips
Affiliation:
Hahn-Meitner-Institut, Kekuléstrasse 5, 12489 Berlin, Germany
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Abstract

A quantitative study of the trap-dangling bond tunneling recombination in hydrogenated microcrystalline silicon (μc-Si:H) is presented. The transition coefficients were measured at various light exposures and temperatures between T = 10 K and T = 140 K using time-domain measurements of spin-dependent recombination (TSR). TSR is a new characterization method related to electrically detected magnetic resonance (EDMR). It combines the advantages of pulsed electron spin resonance with that of EDMR. In contrast to previous models, the experimental results can only be interpreted if the interaction between the spins of the trap and the dangling bonds as well as triplet recombination is considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A16.2
Copyright
Copyright © Materials Research Society 2002

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