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LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

Published online by Cambridge University Press:  28 February 2011

F.-C. Su ,
S. Levine ,
P. E. Vanier  and
F. J. Kampas
F.-C. Su
Affiliation:
Department of Materials Science and Engineering, State University of New York, Stony Brook, NY 11794
S. Levine
Affiliation:
Department of Materials Science and Engineering, State University of New York, Stony Brook, NY 11794
P. E. Vanier
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton NY 11973
F. J. Kampas
Affiliation:
Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton NY 11973
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Abstract

Amorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 399
Copyright
Copyright © Materials Research Society 1986

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