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Light-Induced Effects in a-Si:H Films Fabricated by Intense Light-Flash Assisted Plasma CVD, and Its Application to the Stabilisation of a-Si:H Solar Cells

Published online by Cambridge University Press:  21 February 2011

W.A. Nevin
Affiliation:
Central Research Laboratories, Kaneka Corporation, 2–80, 1-chome, Yoshida-cho, Hyogo-ku, Kobe 652, Japan.
H. Yamagishi
Affiliation:
Central Research Laboratories, Kaneka Corporation, 2–80, 1-chome, Yoshida-cho, Hyogo-ku, Kobe 652, Japan.
T. Fujihara
Affiliation:
Central Research Laboratories, Kaneka Corporation, 2–80, 1-chome, Yoshida-cho, Hyogo-ku, Kobe 652, Japan.
A. Takenaka
Affiliation:
Central Research Laboratories, Kaneka Corporation, 2–80, 1-chome, Yoshida-cho, Hyogo-ku, Kobe 652, Japan.
M. Yamaguchi
Affiliation:
Central Research Laboratories, Kaneka Corporation, 2–80, 1-chome, Yoshida-cho, Hyogo-ku, Kobe 652, Japan.
Y. Tawada
Affiliation:
Central Research Laboratories, Kaneka Corporation, 2–80, 1-chome, Yoshida-cho, Hyogo-ku, Kobe 652, Japan.
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Abstract

We describe a new technique for the deposition of a-Si:H, in which the growing film surface is periodically irradiated with high-intensity xenon light pulses. The films show high stability of the photoconductivity under illumination, but also exhibit a high dark conductivity, so that the photosensitivity is reduced. Infrared and Raman scattering measurements indicate little difference in the Si-H and Si-Si bonding structures compared to reference films; however, there is a large increase in the sub-bandgap absorption in addition to a shift of the Fermi level, implying some subtle modification of the film growth process caused by the irradiation. Results on the preparation and stability testing of solar cells fabricated using this technique are also described.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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