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Light-Emitting Si:Er:O Diodes Operating In The Avalanche Regime

Published online by Cambridge University Press:  10 February 2011

N. A. Sobolev ,
A. M. Emel'yanov ,
S. V. Gastev ,
P. E. Khakuashev ,
Yu. A. Nikolaev  and
M. A. Trishenkov
N. A. Sobolev
Affiliation:
Ioffe Physicotechnical Institute, St.Petersburg 194021, Russia
A. M. Emel'yanov
Affiliation:
St.Petersburg State Technical University, St.Petersburg 195251, Russia
S. V. Gastev
Affiliation:
Ioffe Physicotechnical Institute, St.Petersburg 194021, Russia
P. E. Khakuashev
Affiliation:
Scientific and Manufacturing Enterprise “Orion”, Moscow 111123, Russia
Yu. A. Nikolaev
Affiliation:
Ioffe Physicotechnical Institute, St.Petersburg 194021, Russia
M. A. Trishenkov
Affiliation:
Scientific and Manufacturing Enterprise “Orion”, Moscow 111123, Russia
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Abstract

Electroluminescence (EL) characteristics of avalanching diodes fabricated by Er and O co-implantation and subsequent annealing have been studied. Distribution of Er3+-related EL at 1.538 μm was found to be uniform over the device area at 300 K. Saturation of the Er-related EL intensity is achieved under the avalanche regime at current density one order of magnitude lower than that under the tunnel regime. An EL decay is less than 10 μs (being time response of our detector) after the diode turned off the avalanche regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 139
Copyright
Copyright © Materials Research Society 1998

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References

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