Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:33:34.841Z Has data issue: false hasContentIssue false
  • English
  • Français

Light Ion Irradiation Creep of SCS-6 Silicon Carbide Fibers in the Temperature Range 450 – 1100°C

Published online by Cambridge University Press:  15 February 2011

R. Scholz  and
H. Pasic
R. Scholz
Affiliation:
Commission of the European Community, JRC, 21020 Ispra (Va), TP 202, Italy
H. Pasic
Affiliation:
Ohio University, Mechanical Engineering Department, Athens, OH 45701, USA
Get access

Abstract

Creep tests were conducted in torsion on Textron SCS-6™ silicon carbide (SiC) fibers during irradiation with light ions in the temperature range 450-1100°C up to doses of 0.06 dpa. The fibers, produced by chemical vapor deposition (CVD), should be representative of a SiC/SiC composite matrix produced by chemical vapor infiltration (CVI).

For temperatures between 450 and 600°C, the irradiation creep curves were characterised by long lasting strain transients during which the creep rate slowed down before reaching approximately steady state values. On a decrease in temperature the creep rate increased.

For temperatures between 900 and 1100°C, the transient creep regime was negligible. The creep rates reached constant values shortly after starting the irradiation and increased with temperature. The activation energy was E = 0.55±0.15 eV.

The results are discussed in terms of concentration and mobility of point defects and the change of these quantities with temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 279
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jones, R.H., Steiner, D., Heinisch, H.L., Newsome, G.A., Kerch, H.M., J. of Nucl. Mat. 245, 87 (1997)Google Scholar
2. Price, R.J., Nucl. Techn. 35, 320 (1977)Google Scholar
3. Zhu, Z., Jung, P., J. Nucl. Mat. 212–215, 1082 (1993)Google Scholar
4. Scholz, R., J. Nucl. Mat. 254, 74 (1998)Google Scholar
5. Snead, L.L., Fusion Techn. 24, 65 (1992)Google Scholar
6. Ning, X.J., Pirouz, P., J. Mater. Res. 6, 2234 (1991)Google Scholar
7. Sathish, S., Cantrell, J.H., Yost, W.T., J. Am. Cer. Soc. 79(1), 209 (1996)Google Scholar
8. Devanathan, R., Rubia, T. Diaz de la, Weber, W.J., J. Nucl. Mat. 253, 47 (1998)Google Scholar
9. Hong, J., Davis, R., Newbury, D., J. Mat. Sci. 16, 2485 (1981)Google Scholar
10. Huang, H., Ghoniem, N., Wong, J., Baskes, M., Model. Simul. Mat. Sci. Eng. 3, 615 (1995)Google Scholar
11. Mokrushin, A.D., Girka, A.I., Shishkin, A.V., phys. stat. sol. (a) 128, 31 (1991)Google Scholar