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Light Induced Changes in the Non-Gaussian Noise Statistics in Doped Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

J. Fan  and
J. Kakalios
J. Fan
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
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Abstract

The power spectrum of coplanar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) has been measured before and after metastable defect creation by light soaking. The average magnitude and spectral slope of the 1/f noise are not affected by illumination, however significant changes in the higher order statistics are observed. Associated with the decrease of conductivity upon light soaking (the Staebler-Wronski effect), there is a decrease in the correlation of the noise power which characterize the non-Gaussian noise in the annealed state. These changes in the noise statistics are reversible by annealing. The light-induced changes in the non-Gaussian statistics provide experimental support for models of light induced defect creation which involve long-ranged and many body interactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 661
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1976); J. Appl. Phys. 51, 3262 (1980).Google Scholar
2. Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B. 32, 23 (1985).Google Scholar
3. Branz, H. and Silver, M., Phys. Rev. B 42, 7420 (1990).Google Scholar
4. von Roedern, Bolko, A.I.P. Conf. Proc. 234, 122 (1991).Google Scholar
5. Fedders, P. A., Fu, Y. and Drabold, D. A., Phys. Rev. Lett. 68, 1888 (1992).Google Scholar
6. Hauschildt, D., Fuhs, W. and Mell, H., Phys. Stat. Sol. (b) 111, 171 (1982).Google Scholar
7. Norberg, R. E., Fedders, P. A., Boldart, J., Corey, R., Kim, Y. W., Paul, W., and Turner, W., M.R.S. Conf. Proc. 219, 223 (1991).Google Scholar
8. Kakalios, J. and Street, R. A., Phys. Rev. B 34, 6014 (1986).Google Scholar
9. Parman, C., Israeloff, N. and Kakalios, J., Phys. Rev. Lett. 69, 1097 (1992).Google Scholar
10. Parman, C. and Kakalios, J., Phys. Rev. Lett. 67, 2529 (1991).Google Scholar
11. Parman, C., Israeloff, N. and Kakalios, J., Phys. Rev. B 44, 8391 (1991).Google Scholar
12. Fan, J. and Kakalios, J., Phys. Rev. B 47 (in press).Google Scholar
13. Restle, P. J., Weissman, M. B. and Black, R. D., J. Appl. Phys. 54, 5844 (1983); Restle, P. J., Hamilton, R. J. and Weissman, M. B. and Love, M. S., Phys. Rev. B 31, 2254 (1985).Google Scholar
14. Howard, J. A. and Street, R. A., Phys. Rev. B 44, 7935 (1991).Google Scholar
15. Overhof, H., M.R.S. Conf. Proc. 258, 681 (1992).Google Scholar
16. Ohsawa, M., Hama, T., Ichimura, T., Akasaka, T., Sakai, H., Ishida, S. and Uchida, Y., J. Non-Cryst. Solids 77 & 78, 401 (1985); Bhattacharya, E. and Mahan, A. H., Appl. Phys. Lett. 52, 1587 (1988).Google Scholar