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Light Emission From Erbium Doped Si1-x XGe1Heterostructures

Published online by Cambridge University Press:  10 February 2011

J H Evans-Freeman ,
A T Naveed ,
M Q Huda ,
A R eaker ,
D C oughton  and
A C right
J H Evans-Freeman
Affiliation:
Centre for Electronic Materials, UMIST, PO Box 88, Manchester, M60 1QD, UK
A T Naveed
Affiliation:
Centre for Electronic Materials, UMIST, PO Box 88, Manchester, M60 1QD, UK
M Q Huda
Affiliation:
Dept EEE, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh
A R eaker
Affiliation:
Centre for Electronic Materials, UMIST, PO Box 88, Manchester, M60 1QD, UK
D C oughton
Affiliation:
SiGe Microsystems Inc, Ottawa, Canada
A C right
Affiliation:
North East Wales Institute of Higher Education, Wrexham, UK
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Abstract

UHVCVD-grown SiO.s 7Ge0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54ýim have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 133
Copyright
Copyright © Materials Research Society 1998

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