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Light- and Heavy-Hole Bound Exciton Transitions and Free to Bound Transitions in GaxAl1-xAs/GaAs Quantum Wells

Published online by Cambridge University Press:  25 February 2011

Donald C. Reynolds  and
K.K. Bajaj
Donald C. Reynolds
Affiliation:
Electronic Technology Laboratory, Wright Research and Development Center, Wright-Patterson Air Force Base, OH 45433
K.K. Bajaj
Affiliation:
Arizona State Univeristy, Tempe, AZ 86443
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Abstract

Excitons bound to neutral donors in AlxGa1-xAs/GaAs quantum wells were observed by high resolution resonant excitation photoluminescence, and temperature dependent photoluminescence measurements. Changes in the binding energy of excitons are observed when the donors are located in the center of the well, at the edge of the well, or in the center of the barrier. The variations in these binding energies are reported as a function of well size from 75–350Å. The binding energies increased as the well size was reduced to about 100Å, with further reductions in well size they decreased.

Light-hole free excitons bound to neutral donors were observed in AlxGa1-xAs/GaAs quantum wells. The transitions were observed, using selective excitation photoluminescence spectroscopy, in the energy region between the light-hole and heavy-hole free exciton transitions where no other intrinsic transitions exist. The neutral donor-bound heavy-hole free-exciton transitions were also observed when the light-hole bound exciton transitions were observed. Quantum well structures which showed no evidence of a heavy-hole donor bound exciton also showed no evidence of a light-hole donor bound exciton.

Free to bound transitions, free hole to bound electron, have also been observed in the AlxGa1-xAs/GaAs quantum wells. The diamagnetic shift of these transitions was used to distinguish them from excitonic transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 313
Copyright
Copyright © Materials Research Society 1990

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References

1 Shanabrook, B.V. and Comas, J., Surf. Sci., 142, 504 (1984).Google Scholar
2 Reynolds, D.C., Bajaj, K.K., Litton, C.W., Yu, P.W., Masselink, W.T., Fischer, R., and Morkoc, H., Phys. Rev. B 29, 7038 (1984).Google Scholar
3 Nomura, Y., Shinozaki, K., and Ishii, M., J. Appl. Phys. 58, 1864 (1985).Google Scholar
4 Liu, X., Petrou, A., MeCombe, B.D., Ralston, J. and Wicks, G., Phys. Rev. B 38, 8522 (1988).Google Scholar
5 Charbonneau, S., Steiner, T., Thewalt, M.L.W., Koteles, Einils S., Chi, J.Y., and Elman, B., Phys. Rev. B 38, 3583 (1988).Google Scholar
6 Haynes, J.R., Phys. Rev. Lett. 4, 361 (1960).Google Scholar
7 Hopfield, J.J., Proc. Int. Conf. Phys. Semicond., 7th, Paris (Hulin, M., ed.) pp. 729–735, Donod, Paris (1964).Google Scholar
8 Greene, R.L., Bajaj, K.K., and Phelps, D.E., Phys. Rev. B 29, 1807 (1984).Google Scholar
9 Greene, R.L., and Bajaj, K.K., Solid State Comm. 53, 1103 (1985).Google Scholar
10 Greene, R.L., and Bajaj, K.K., Phys. Rev. B 34, 951 (1986).Google Scholar
11 Lane, P., and Greene, R.L., Phys. Rev. B 33, 5871 (1986).Google Scholar
12 Kleinman, D.A., Phys. Rev. B 28, 871 (1983).Google Scholar
13 Miller, R.C., Gossard, A.C., Tsang, W.T. and Munteanu, O., Solid State Commun. 43, 519 (1982).Google Scholar
14 Reynolds, D.C., Bajaj, K.K., Leak, C.E., Stubs, C.E., Jones, R.L., Evans, K.R., Yu, P.W., and Theis, W.M., Phys. Rev. B (in press).Google Scholar
15 Bajaj, K.K., Reynolds, D.C., Litton, C.W., Greene, R.L., Yu, P.W., Peng, C.K. and Morkoc, H., “Gallium Arsenide and Related Compounds”, Inst. Phys. Conf. Series No. 83, editor Londley, W.T.. (Institute of Physics, Bristol, 1987), p. 325.Google Scholar
16 Greene, R.L. and Bajaj, K.K., Solid State Commun. 45, 825 (1983).Google Scholar
17 Greene, R.L. and Bajaj, K.K., Phys. Rev. B 37, 4604 (1988).Google Scholar
18 Skolnick, M.S., Jain, A.K., Stradling, R.A., Ousset, J.C., and Askenasy, S., J. Phys. C 9, 2809 (1976).Google Scholar
19 Chang, Y.C. and Schulman, J.M., Appl. Phys. Lett. 43, 536 (1983).Google Scholar
20 Lawaetz, P., Phys. Rev. B 4, 3460 (1971).Google Scholar
21 Bangert, E. and Landwehr, G., Superlattices and Micros tructures 1, 363 (1985).Google Scholar
22 Broido, D.A. and Sham, L.J., Phys. Rev. B 31, (1985).Google Scholar