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Light Absorption Effects on the Nd Laser Annealing of Ion Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

P. Baeri ,
A.E. Bapbarino ,
S.U. Campisano ,
M.G. Grimaldi ,
G. Foti  and
E. Rimini
P. Baeri
Affiliation:
Istituto di Struttura della Materia, Corso Italia, 57, I95129, Catania Italy
A.E. Bapbarino
Affiliation:
Istituto di Struttura della Materia, Corso Italia, 57, I95129, Catania Italy
S.U. Campisano
Affiliation:
Istituto di Struttura della Materia, Corso Italia, 57, I95129, Catania Italy
M.G. Grimaldi
Affiliation:
Istituto di Struttura della Materia, Corso Italia, 57, I95129, Catania Italy
G. Foti
Affiliation:
Istituto di Struttura della Materia, Corso Italia, 57, I95129, Catania Italy
E. Rimini
Affiliation:
Istituto di Struttura della Materia, Corso Italia, 57, I95129, Catania Italy
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Abstract

The crystallization onset and the annealing thresholds have been nmeasured as a function of the absorbed energy density in ion implanted amorphous silicon irradiated with nanosecond Nd pulse. Thin amorphous layers (∼500 Å) require higher thresholds ccapared with thick (∼4000 Å) amorphous layers. This result can be explained in terms of balance between absorbed energy and heat flow. For a given thickness of the amorphous layer the thresholds depend on the absorption coefficient of the amorphous material. This last parameter has been varied frcm 104 to 102 CM−1 by low temperature (T<400°C) pre-treatment of the ion implanted sample. The observed drastic variations of both crystallizazion and annealing thresholds agree well with nunerical evaluation of heat flow.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 227
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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