Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T06:57:01.222Z Has data issue: false hasContentIssue false
  • English
  • Français

Licvd of Cr(C,O) Films from Cr(CO)6 at 248 NM: Gas-Phase and Surface Processes

Published online by Cambridge University Press:  25 February 2011

R. Nowak ,
L. Konstantinov  and
P. Hess
R. Nowak
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D−6900 Heidelberg, F.R.G
L. Konstantinov
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D−6900 Heidelberg, F.R.G
P. Hess
Affiliation:
Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D−6900 Heidelberg, F.R.G
Get access

Abstract

The influence of laser fluence and carbon monoxide partial pressure on the deposition rate of thin Cr(C,O) films was investigated. The films were deposited from Cr(CO)6 mixtures with CO and Ar using a KrF excimer laser. The observed results are discussed with respect to the relative importance of gasphase and surface processes. The results reveal that under the present experimental conditions chromium atoms produced in the gas phase play only a minor role as direct film precursors in KrF laser-induced film deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 85
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Yokoyama, H., Uesugi, F., Kishida, S., Washio, K., Appl.Phys. A 37, 25 (1985)Google Scholar
(2) Konstantinov, L., Nowak, R., Hess, P., Appl.Phys.A 47, 171 (1988)CrossRefGoogle Scholar
(3) Nowak, R., Konstantinov, L., Hess, P., Appl.Surf.Sci., to be published.Google Scholar
(4) Gluck, N.S., Ying, Z., Bartosch, C.E., Ho, W., J.Chem.Phys. 86,4957 (1987)Google Scholar
(5) Gluck, N.S., Wolga, G.J., Bartosch, C.E., Ho, W., Ying, Z., J.Appl.Phys. 61, 998 (1987)Google Scholar
(6) Jackson, R.L., Tyndall, G.W., J.Appl.Phys. 64, 2092 (1988)Google Scholar
(7) Singmaster, K.A., Houle, F.A., Wilson, R.J., Appl.Phys.Lett. 53,1048 (1988)Google Scholar
(8) Tyndall, G.W., Jackson, R.L., J.Chem.Phys. 89, 1364 (1988)CrossRefGoogle Scholar
(9) Weitz, E., J.Phys.Chem. 91, 3945 (1987)Google Scholar