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Leakage Current Behavior in CaZrO3 Thin Films for High-k Applications

Published online by Cambridge University Press:  28 July 2011

Ting Yu ,
Weiguang Zhu ,
Xiaofeng Chen  and
Yuekang Lu
Ting Yu
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
Weiguang Zhu
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
Xiaofeng Chen
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
Yuekang Lu
Affiliation:
Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798
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Abstract

Electrical properties and leakage current mechanisms of perovskite CaZrO3 dielectric thin films have been studied in this paper. CaZrO3 thin films were deposited on Pt/SiO2/n-Si substrate by the sol-gel wet chemical technology, and then annealed at temperatures ranging from 550 to 700 °C for 1h in O2. The films with platinum (Pt) top and bottom electrodes were characterized with respect to the leakage current as a function of temperature and applied voltage. The CaZrO3 film annealed at 600 °C was amorphous and showed good electrical properties with a dielectric constant of about 15 and leakage current density of 10−8 A/cm2 at high applied electrical field of 2.5 MV/cm. The data can be interpreted via a Schottky barrier model. The conduction mechanism at low electric fields is due to Ohmic conduction. On the other hand Schottky mechanism dominates at the intermediate fields. The high dielectric constant, low leakage current density and high breakdown strength suggest that the CaZrO3 thin film is a promising candidate for high-k applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D3.10
Copyright
Copyright © Materials Research Society 2004

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References

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