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Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment

Published online by Cambridge University Press:  26 February 2011

Abdurauf Dzhurakhalov ,
Sirojiddin Rahmatov ,
Nigorakhon Teshabaeva  and
Maqsud Yusupov
Abdurauf Dzhurakhalov
Affiliation:
[email protected], Arifov Institute of Electronics, Theoretical Dept, F.Khodjaev Street, 33, Tashkent, Tashkent, 700125, Uzbekistan, 998 71 1627331, 998 71 1628767
Sirojiddin Rahmatov
Affiliation:
[email protected], Arifov Institute of Electronics, Theoretical Dept., Uzbekistan
Nigorakhon Teshabaeva
Affiliation:
[email protected], Arifov Institute of Electronics, Theoretical Dept., Uzbekistan
Maqsud Yusupov
Affiliation:
[email protected], Arifov Institute of Electronics, Theoretical Dept., Uzbekistan
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Abstract

The ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented.

Keywords

sputteringion-implantationIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO14-08
Copyright
Copyright © Materials Research Society 2006

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References

1 Winter, H., Physics Reports. 367, 387 (2002).Google Scholar
2 Pedemonte, L., Bracco, G., Boragno, C., de Mongeot, F. Buatier and Valbusa, U., Phys. Rev. B 68, 115431 (2003).Google Scholar
3 Lee, S.M., Fell, C.J., Marton, D. and Rabalais, J.W., J. Appl. Phys. 83, 5217 (1998).Google Scholar
4 Labanda, J.G.C., Barnett, S.A. and Hultman, L., J. Vac. Sci. Technol. B 16, 1885 (1999).Google Scholar
5 Hansen, H., Polop, C., Michely, T., Friedrich, A. and Urbassek, H.M., Phys. Rev. Let. 92, 246106–1 (2004).Google Scholar
6 Danailov, D.M., O'Connor, D.J. and Snowdon, K.J., Surf. Sci. 347, 215 (1996).Google Scholar
7 Sule, P., Menyhard, M., Nordlund, K., Nucl. Instr. Meth. Phys. Res. B 211, 524 (2003).Google Scholar
8 Gayone, J.E., Pregliasco, R.G., Gomez, G.R., Sanchez, E.A. and Grizzi, O., Phys. Rev. B 56, 4186 (1997).Google Scholar
9 O'Connor, D.J. and Biersack, J.P., Nucl. Instr. Meth. Phys. Res. B 15, 14 (1986).Google Scholar
10 Parilis, E.S., Kishinevsky, L.M., Turaev, N.Yu., Baklitzky, B.E., Umarov, F.F., Verleger, V.Kh., Nizhnaya, S.L., Bitensky, I.S., Atomic Collisions on Solid Surfaces (North-Holl. Publ., Amsterdam, 1993) p. 634.Google Scholar
11 Dzhurakhalov, A.A. and Khafizov, I.I., Nucl. Instr. Meth. Phys.Res. B 153, 326 (1999).Google Scholar
12 Dzhurakhalov, A.A., Rahmatov, S.E. and Yadgarov, I.D., Nucl. Instr. Meth. Phys.Res. B 230, 560 (2005).Google Scholar
13 Dzhurakhalov, A.A., Microelectronic Engineering. 69, 570 (2003).Google Scholar