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Layer-by-Layer Oxidation of Silicon

Published online by Cambridge University Press:  16 February 2011

T. Yasaka ,
M. Takakura ,
S. Miyazaki  and
M. Hirose
T. Yasaka
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
M. Takakura
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
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Abstract

Growth kinetics of native oxide on HF-treated Si surfaces terminated with Si-H bonds has been studied by angle-resolved x-ray photoelectron spectroscopy. The oxide growth rate in pure water for an n+ Si(100) surface is significantly high compared to that of p+, and the n or p type Si oxidation rate is in between. This is explained by the formation of ions through electron transfer from Si to adsorbed O2 molecules and the resulting enhancement of the oxidation rate. The oxide growth on Si(100) is faster than (110) and (111) as interpreted in terms of the steric hindrance for molecular oxygen adsorption on the hydrogen terminated silicon 1×1 surface structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 225
Copyright
Copyright © Materials Research Society 1991

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References

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