Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-10T20:29:46.997Z Has data issue: false hasContentIssue false

Layer Thickness Dependence of Transport Properties in Y1Ba2Cu3O7-y Superconducting Multilayer Films

Published online by Cambridge University Press:  28 February 2011

Sang Yeol Lee
Affiliation:
Department of Electrical and Computer Engineering, New York State Institute on Superconductivity, State University of New York at Buffalo, Buffalo, New York 14260
Eiki Narumi
Affiliation:
Department of Electrical and Computer Engineering, New York State Institute on Superconductivity, State University of New York at Buffalo, Buffalo, New York 14260
David T. Shaw
Affiliation:
Department of Electrical and Computer Engineering, New York State Institute on Superconductivity, State University of New York at Buffalo, Buffalo, New York 14260
Get access

Abstract

Multilayers of Y1Ba2Cu3O7-y/Y1Ba2(Cu1−xNix)3O7-ysuperconducting thin films have been grown epitaxially on (100) ZrO2 substrates using a pulsed laser deposition technique. The thickness of the Y1Ba2Cu3O7-y layer was varied from 60 Å to 900 Å and the thickness of the Y1Ba2(Cu1−xNix3O7-y layer was varied from 60 A to 100 A to determine the effect of the Ni-doped layers on the superconducting properties. Variations of critical current density were investigated as a function of temperature in magnetic fields up to 5 T. Magnetic field dependence of normalized critical current density, Jc(H)/Jc(O), is improved by the growth of Ni-doped multilayer structures, possibly due to an increase in flux pinning force.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chaudhari, P., Koch, R.H., Leibowitz, R.B., McGuire, T.R. and Gambino, R.J., Phys. Rev. Lett. 58, (1987) 2684.CrossRefGoogle Scholar
[2] Bendorz, J.C. and Muller, K.A., Z. Physics. B64, (1986) 189.Google Scholar
[3] Wu, M.K., Ashburn, J.R., Thorn, C.J., Hor, P.H.. Meng, R.L., Gao, L., Huang, Z.J., Wang, Q. and Chu, C.W., Phys. Rev. Lett. 58, (1987) 907.Google Scholar
[4] Triscon, J.M., Karkut, M.G., Antognazza, L., Brunner, O. and Fischer, O., Phys. Rev. Lett. 63, (1989) 1016.Google Scholar
[5] Gross, R., Gupta, A., Olsson, E., Segmuller, A. and Koren, G., Appl. Phys. Lett. 57, (1990) 203.Google Scholar
[6] Witanachchl, S., Lee, S.Y., Song, L.W., Kao, Y.H. and Shaw, D.T., Appl. Phys. Lett. 57, (1990) 2133.Google Scholar
[7] Kwok, H.S., Mattocks, P., Shi, L., Wang, X.W., Witanachchi, S., Ylng, Q.Y., Zheng, J.P. and Shaw, D.T., Appl. Phys. Lett. 52, (1988) 1825.Google Scholar
[8] Zheng, Z.P., Kim, H.S., Ying, Q.Y., Barone, R., Bush, P., Shaw, D.T. and Kwok, H.S.. Appl. Phys. Lett. 55, (1989) 1044.Google Scholar
[9] Tarascon, J.M., Barboux, P., Miceli, P.F., Greene, L.H. and Hull, G.W., Phys. Rev. B, 37 (1988) 7458.Google Scholar
[10] Lowndes, D.H., Norton, D.P. and Budai, J.D., Phys. Rev. Lett. 65, (1990) 1160.Google Scholar
[11] Campbell, A.M., Evetts, J.E. and Dew-Hughes, D., Phil. Mag., 18, (1968) 313.Google Scholar
[12] Takahashi, S. and Tachiki, M., Phys. Rev. B 35, (1987) 145.Google Scholar