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Lattice Vibrations and Defect-Induced Vibrational Properties in Cubic SiC

Published online by Cambridge University Press:  25 February 2011

P. J. Lin-Chung
P. J. Lin-Chung*
Affiliation:
Naval Research Laboratory Washington, D. C. 20375–5000
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Abstract

A theoretical study of both the bulk phonon dispersion relations in cubic SiC and the vibrational properties induced by native defects is presented. The Keating Hamiltonian is used for the quadratic potential energy of the system, and the supercell approach is employed to treat the defect problem. The defect complexes considered are antisite defects, divacancy defects, and three different types of carbon di-interstitial defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 221
Copyright
Copyright © Materials Research Society 1987

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References

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