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Lattice Relaxation Effects in Si and GaAs Nanocrystals

Published online by Cambridge University Press:  28 February 2011

X. S. Zhao ,
Y. R. Ge ,
J. Schroeder  and
P. D. Persans
X. S. Zhao
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Y. R. Ge
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
J. Schroeder
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
P. D. Persans
Affiliation:
Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Raman scattering results on porous silicon, and silicon and gallium arsenide nanocrystals show that almost all vibrational modes become Raman active and remarkably soft in these nanocrystal systems. The experimental results further demonstrate that the carrier-induced strain effects play an important role on the optical properties of such nanocrystal systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 199
Copyright
Copyright © Materials Research Society 1995

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References

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