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Lattice Properties of Ge and GaAs Strained-Layers on Si

Published online by Cambridge University Press:  21 February 2011

Resul Eryigit ,
Zhifeng Sui  and
Irving P. Herman
Resul Eryigit
Affiliation:
Department of Applied Physics and Columbia Radiation Laboratory, Columbia University, New York, New York 10027.
Zhifeng Sui
Affiliation:
Department of Applied Physics and Columbia Radiation Laboratory, Columbia University, New York, New York 10027.
Irving P. Herman
Affiliation:
Department of Applied Physics and Columbia Radiation Laboratory, Columbia University, New York, New York 10027.
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Abstract

A phenomenological lattice dynamics model has been developed that describes how strain affects phonon frequencies and elastic constants in Group IV and III-V semiconductor thin films and strained layers. Using this model, the phonon dispersion relations for strained-layer heterostructures of Ge and GaAs on Si have been obtained in the quasiharmonic approximation. This model uses available experimental data and can predict the effect of arbitrary strains on thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 295
Copyright
Copyright © Materials Research Society 1995

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