Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-29T07:38:51.987Z Has data issue: false hasContentIssue false

Lattice Location of Boron and Hafnium Dopants in an Aluminide by Use of Ion Channeling/Nuclear Reaactnio Analyses

Published online by Cambridge University Press:  28 February 2011

H. G. Bohn
Affiliation:
Kernforschungsanlage, Juelich, D5170 Juelich, Federal Republic of Germany
J.M. Williams
Affiliation:
Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, TN 37831
J.H. Barrett
Affiliation:
Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, TN 37831
C.T. Liu
Affiliation:
Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, TN 37831
Get access

Abstract

Experiments have made use of Rutherford backscattering (RBS), ion channeling techniques and analyses for nuclear reaction products to study lattice location of B and Hf dopantsin an ordered nickel aluminide. Studies were of an alloy single crystal of composition Ni76A123Hf1 with about 0.1 at. % of B added. Analysis for B was accomplished by detection of alpha particles resulting from the reaction 11B(p,αi)8 Be, in ion channeling experiments in which RBS from the Ni constituent was used to control channeling in the host lattice. Yield of the reaction product from proton interaction with B decreased relative to random for channeling in a <100> direction, but increased relative to random for channeling in a <110= direction. It was concluded that B occupies primarily octahedral interstitial sites. RBS/channeling half-angles for Hf in a <100> direction are somewhat smaller than those for Ni, but nevertheless considerably larger than half-angles expected for Al. It is concluded that the majority of Hf atoms are on the Ni sublattice.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

1. Aoki, K. and Izumi, O., Nippon Kinzoku Takkaishi 43, 1190 (1979).Google Scholar
2. Liu, C.T. and Koch, C.C., in Proceedings of a Public Workshop on Trends in Critical Materials Requirements for Steels of the Future: Conservation and Substitution Technology for Chromium (NBSIR-83-2679-2, National Bureau of Standards, Washington, D.C., June 1983).Google Scholar
3. Liu, C.T., White, C.L., Koch, C.C., Lee, E.H., in High Temperature Materials Chemistry-II, Munir, L.A. and Cubicciotti, D., Eds. (Electrochemical Society, Pennington, N.J., 1983), vol. 83, No. 7, p. 32.Google Scholar
4. Liu, C.T., White, C.L., and Horton, J.A., Acta. Met. 33, 213 (1985).Google Scholar
5. Taub, A.I., Huang, S.C., Chang, K.M., Metall. Trans. A 15A, 399 (1984).Google Scholar
6. Huang, S.C., Taub, A.I., and Chang, K.M., Acta. Met. 32, 1703 (1984).Google Scholar
7. Liu, C.T. and Stiegler, J.O., Science 226, 636 (1984).Google Scholar
8. Liu, C.T., “Design of Ordered Intermetallic Alloys for High Temperature Structural Use,” p. 289 in High Temperature Alloys: Theory and Design, ed. by Stiegler, J. O., AIME publications, 1985.Google Scholar
9. Chu, Wei-Kan, Mayer, James W., and Nicolet, Marc A., Backscattering Spectrometry (Academic Press, New York, 1978).Google Scholar
10. Feldman, Leonard C., Mayer, James W., and Thomas, S. Picraux, Materials Analysis by Ion Channeling (Academic Press, New York, 1982).Google Scholar
11. Anderson, J.U., Laegsgaard, E., and Feldman, L.C., Rad. Eff. 12, 219 (1972).Google Scholar
12. Feldman, L.C. and Picraux, S.T., p. 109 in Ion Beam Handbook for Material Analysis, ed. by Mayer, J. W. and Rimini, E. (Academic Press, New York, 1977).Google Scholar
13. Anderson, H.H. and Ziegler, J.F., Hydrogen Stopping Powers and Ranges in All Elements, Vol. 3 (Pergamon Press, New York, 1977).Google Scholar
14. Barrett, J.H., Phys. Rev. B3, 1527 (1971), see Eq. 14.CrossRefGoogle Scholar
15. Bohn, H.G., Schumacher, R. and Vianden, R.J. (this volume).Google Scholar
16. Brenner, S.S., Sieloff, D., and Burke, M.G., J. Phys. (Paris) Colloq.C2, Suppl. 3 47, C2215 (1986).Google Scholar
17. Lin, H., Seiberling, L.E., Lyman, P.F., and Pope, D.P. (this volume).Google Scholar
18. Miller, M.K. and Horton, J.A. (this volume).Google Scholar
19. Bentley, J., in Proceedings of the 44th Annual Meeting of the Electron Microscope Society of America, Albuquerque, New Mexico, August 1986, ed. by Bailey, G. W., San Francisco Press, San Francisco, 1986, p. 704.Google Scholar