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Lattice Distortion Induced by Laser Assisted MOCVD of GaAs

Published online by Cambridge University Press:  25 February 2011

S. A. Hussien ,
N. H. Karam ,
S. M. Bedair ,
A.A. Fahmy  and
N. A. El-Masry
S. A. Hussien
Affiliation:
Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, NC 27695-7907
N. H. Karam
Affiliation:
Department of Electrical EngineeringNorth Carolina State University, Raleigh, NC 27695-7911
S. M. Bedair
Affiliation:
Department of Electrical EngineeringNorth Carolina State University, Raleigh, NC 27695-7911
A.A. Fahmy
Affiliation:
Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, NC 27695-7907
N. A. El-Masry
Affiliation:
Department of Materials Science and EngineeringNorth Carolina State University, Raleigh, NC 27695-7907
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Abstract

Laser induced chemical vapor deposition (LCVD) of GaAs has been achieved at low temperature using trimethylgallium and arsine precursors. The deposited film traces the path of the Ar+ laser, thus making it attractive for several applications. The localized thermal expansion resulting from the laser induced temperature rise has to be elastically accomodated in order to prevent lattice distortion during the LCVD process. We report on the growth conditions that can be used without the occurence of plastic deformation in the epitaxial films. A model is presented to explain the thermal expansion induced distortion during the deposition process and will be compared with experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 165
Copyright
Copyright © Materials Research Society 1989

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References

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