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Lateral Composition Modulation in Mixed Anion Short Period Superlattices

Published online by Cambridge University Press:  17 March 2011

C. Dorin ,
C. Wauchope  and
J. Mirecki Millunchick
C. Dorin
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109-2136
C. Wauchope
Affiliation:
Electron Microbeam Analysis Laboratory, University of Michigan, Ann Arbor, MI 48109-2136
J. Mirecki Millunchick
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109-2136
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Abstract

In this work, we demonstrate for the first time lateral composition modulation in GaAs/GaSb short period superlattices (SPS). Several different structures were investigated in order to study the role of Group V overpressure on the final composition and uniformity of the structure. Cross sectional transmission electron diffraction and xray diffraction reciprocal space maps reveal that the film is indeed phase separated. The composition modulation observed in these films is a result of the SPS growth and not due to spinodal decomposition, as evidenced by the fact that an alloy grown at the same conditions results in a homogeneous layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N3.7
Copyright
Copyright © Materials Research Society 2002

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References

[1]Millunchick, J. Mirecki., Twesten, R. D., Follstaedt, D. M., Lee, S. R., Jones, E.D., Ahrenkiel, S. P., Zhang, Y., Mascarenhas, A., Applied Physics Letters, 70, 1402 (1997)Google Scholar
[2] Cheng, K. Y., Hsieh, K. C., Baillargeon, J. N., Appl. Phys. Lett, 60 (23), 2892, 1992,Google Scholar
[3] Norman, A., , G, Ahrenkiel, S. P., Moutinho, H., Al-Jassim, M. M., Mascarenhas, A., Millunchick, J. Mirecki, Lee, S. R., Twesten, R. D., Follstaedt, D. M., Reno, J. L, Jones, E.D., Applied Physics Letters, 73, 1844 (1998)Google Scholar
[4] Blank, H.R, Mathis, S., Hall, E., Bhargava, S., Behres, A., Heuken, M., Kroemer, H., Narayanamurti, V., Journal of Crystal Growth, 187,18 (1998)]Google Scholar