Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:41:54.282Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser-Induced Liquid Zone Migration of Metal-Silicon Alloys in Si

Published online by Cambridge University Press:  15 February 2011

P. Kluge-Weiss  and
P. Roggwiller
P. Kluge-Weiss
Affiliation:
Brown Boveri Research Center, CH–5405 Baden, Switzerland
P. Roggwiller
Affiliation:
Brown Boveri Research Center, CH–5405 Baden, Switzerland
Get access

Abstract

Patterns of sharp narrow vertical p-n junctions were produced by scanning a laser beam over the surface of a silicon wafer coated on the backsurface by either Au-Sb, Al or Ga. Formation of the junctions occurs by liquid zone migration along the thermal gradient induced by the laser beam. Nd-YAG as well as CO2 laser light was employed and the dependance of migration zone width, velocity, front stability and structure on the different laser wave lengths was studied. Structural investigations of the regrown layers included optical microscopy, SEM and TEM studies as well as spreading resistance measurements to ascertain the behaviour of the various p-n junctions produced. Annealing treatments of the migrated zones were performed to alleviate the stresses produced during the migration experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 449
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pfann, W. G., “Zone Melting“ 2nd ed., Wiley, NY 1963 Google Scholar
2. Wernick, J. H., J. Chem. Phys. 25, 47 (1956)Google Scholar
3. Cline, H. E. and Anthony, T. R., J. Appl. Phys. 49, 4, (1978)Google Scholar
4. Mizrah, T., J. Appl. Phys. 51, 1, 1207 (1980)Google Scholar
5. Kimerling, L. C., Leamy, H. J. and Jackson, K. A. in Laser and Electron Beam Processing of Electronic Materials, Anderson, C.L., Celler, G.K. and Rozgonyi, G.A., ed., p. 242, (1980)Google Scholar
6. Chang, M. F., J. Electrochem. Soc. 128, 9, p. 1963 (1981)Google Scholar
7. Sedgwick, T. O. in Laser and Electron Beam Solid Interactions and Materials Processing, J. F. Gibbons, L. D. Hess and T. W. Sigmon ed., p. 147 (1981)Google Scholar
8. Kokorowski, S. A., Olson, G. L., Hess, L. D. in Laser and Electron Beam Solid Interactions and Materials Processing, J. F. Gibbons, L. D. Hess and T. W. Sigmon ed., p. 139 (1981)Google Scholar
9. Cline, H. E., Anthony, T.R., J. Appl. Phys. 47, 6, p. 2325 (1976)Google Scholar