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Laser-Induced Fluorescence Diagnostics of CF4/O2/H2 Plasma Etching*

Published online by Cambridge University Press:  15 February 2011

S. Pang  and
S. R. J. Brueck
S. Pang
Affiliation:
Lincoln Laboratory, Massachusetts Insitute of Technology, Lexington, Massachusetts 02173
S. R. J. Brueck
Affiliation:
Lincoln Laboratory, Massachusetts Insitute of Technology, Lexington, Massachusetts 02173
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Abstract

Laser-induced fluorescence experiments have been carried out during CF4/O2/H2 plasma etching of Si and SiO2. Measurements of relative CF2 radical concentrations as a function of rf power, frequency, pressure, and gas composition are reported. The results are correlated with etch rates of Si and SiO2. The balance between CF2 and F concentrations is shown to influence the etching process strongly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 161
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

This work was sponsored by the Department of the Air Force, in part with specific funding from the Air Force Office of Scientific Research.

References

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