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Laser-Assisted Growth of ZnSe by Metalorganic Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

C. A. Coronado ,
E. Ho ,
L. A. Kolodziejski  and
C. A. Huber
C. A. Coronado
Affiliation:
Department of Materials Science and Engineering
E. Ho
Affiliation:
Department of Electrical Engineering and Computer Science Research Laboratory of Electronics Massachusetts Institute of Technology, Cambridge, MA 02139
L. A. Kolodziejski
Affiliation:
Department of Electrical Engineering and Computer Science Research Laboratory of Electronics Massachusetts Institute of Technology, Cambridge, MA 02139
C. A. Huber
Affiliation:
Bunting Institute, Radcliffe College, Cambridge, MA 02138
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Abstract

By employing metalorganic molecular beam epitaxy (MOMBE), the heteroepitaxy of ZnSe on GaAs has been achieved using diethylselenium and diethylzinc. Significant (10x ∼ 15x) growth rate enhancement has been observed when radiation from an argon ion laser is incident to the surface; photons with energies greater than the bandgap at the growth temperature contribute to the enhancement. Photo-thermal effects are ruled out due to the low power densities used (∼200 mW/cm2). Growth rate enhancementis found to be a function of substrate temperature, VI/II gas flow ratio, laser wavelength and intensity. To further understand the effect of the laser on ZnSe growth, solid sources of Zn and Se are used in conjunction with metalorganic gas sources. The effect of laser illumination is found to depend on the combination of precursors employed: both growth rate enhancement and growth rate suppression are observed. Laser-assisted growth has application for achieving. selective area epitaxy and for tuning the surface stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 181
Copyright
Copyright © Materials Research Society 1992

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References

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