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Laser Terahertz Emission Spectroscopy of Graphene/InAs Junctions

Published online by Cambridge University Press:  22 June 2015

Filchito Renee Bagsican ,
Jofferson Gonzales ,
Xiang Zhang ,
Lulu Ma ,
Iwao Kawayama ,
Hironaru Murakami ,
Robert Vajtai ,
Pulickel Ajayan ,
Junichiro Kono  and
Masayoshi Tonouchi
Filchito Renee Bagsican
Affiliation:
Insitute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan
Jofferson Gonzales
Affiliation:
Insitute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan
Xiang Zhang
Affiliation:
Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
Lulu Ma
Affiliation:
Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
Iwao Kawayama
Affiliation:
Insitute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan
Hironaru Murakami
Affiliation:
Insitute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan
Robert Vajtai
Affiliation:
Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
Pulickel Ajayan
Affiliation:
Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
Junichiro Kono
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA Department of Physics & Astronomy, Rice University, Houston, Texas 77005, USA
Masayoshi Tonouchi
Affiliation:
Insitute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871, Japan
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Abstract

We applied laser THz emission spectroscopy to study the effects of monolayer graphene on the THz emission from InAs. THz emission from graphene/InAs varies linearly with the laser excitation power in the low-intensity excitation regime. We found that unlike in graphene/SI-InP junctions, graphene and O2 adsorbates on graphene have no significant effect on the THz emission from graphene/InAs junctions because the THz radiation mechanism in InAs is by the photo-Dember effect, whereas for SI-InP is by the surge current effect. There is also a slight enhancement in the THz emission from both bare InAs and graphene/InAs by UV illumination, which is probably due to the additional photoexcited carriers by UV that somehow enhances the photo-Dember field.

Keywords

chemical vapor deposition (CVD) (deposition)adsorptionIII-V
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1808: Symposium WW – Ultrafast Dynamics in Complex Functional Materials , 2015 , pp. 1 - 7
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., and Firsov, A. A., “Electric Field Effect in Atomically Thin Carbon Films,” Science, vol. 306, no. 5696, pp. 666–669, 2004.CrossRefGoogle Scholar
Geim, A. K. and Novoselov, K. S., “The rise of graphene,” Nature Materials, vol. 6, pp. 183–191, 2007.CrossRefGoogle Scholar
Novoselov, K. S., Fal′ko, V. I., Colombo, L., Gellert, P. R., Schwab, M. G., and Kim, K., “A roadmap for graphene,” Nature, vol. 490, p. 192–200, 2012.CrossRefGoogle Scholar
Gutiérrez, H. R., Perea-López, N., Elías, A. L., Berkdemir, A., Wang, B., Lv, R., López-Urías, F., Crespi, V. H., Terrones, H., and Terrones, M., “Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers,” Nano Letters, vol. 13, p. 3447–3454, 2013.CrossRefGoogle Scholar
Notley, S. M., “High yield production of photoluminescent tungsten disulphide nanoparticles,” Journal of Colloid and Interface Science, vol. 396, pp. 160–164, 2013.CrossRefGoogle Scholar
Huo, N., Yang, S., Wei, Z., Li, S. -S., Xia, J. -B. and Li, J., “Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes,” Scientific Reports, vol. 4, p. 5209, 2014.CrossRefGoogle Scholar
Janisch, C., Wang, Y., Ma, D., Mehta, N., Elías, A. L., Perea-López, N., Terrones, M., Crespi, V. and Liu, Z., “Extraordinary Second Harmonic Generation in Tungsten Disulfide Monolayers,” Scientific Reports, vol. 4, p. 5530, 2014.CrossRefGoogle Scholar
Tassin, P., Koschny, T., and Soukoulis, C.M., “Graphene for Terahertz Applications,” Science, vol. 341, no. 6146, pp. 620–621, 2013.CrossRefGoogle Scholar
Tassin, P., Koschny, T., Kafesaki, M., and Soukoulis, C.M., “A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics,” Nature Photonics, vol. 6, p. 259–264, 2012.CrossRefGoogle Scholar
Otsuji, T., Popov, V., and Ryzhii, V., “Active graphene plasmonics for terahertz device applications,” Journal of Physics D: Applied Physics, vol. 47, p. 094006, 2014.CrossRefGoogle Scholar
Low, T. and Avouris, P., “Graphene Plasmonics for Terahertz to Mid-Infrared Applications,” ACS Nano, vol. 8, no. 2, p. 1086–1101, 2014.CrossRefGoogle Scholar
Sano, Y., Kawayama, I., Tabata, M., Salek, K. A., Murakami, H., Wang, M., Vajtai, R., Ajayan, P. M., Kono, J., and Tonouchi, M., “Imaging molecular adsorption and desorption dynamics on graphene using terahertz emission spectroscopy,” Scientific Reports, vol. 4, p. 6046, 2014.CrossRefGoogle Scholar
Zhang, P., Ma, L., Fan, F., Zeng, Z., Peng, C., Loya, P.E., Liu, Z., Gong, Y., Zhang, J., Zhang, X., Ajayan, P.M., Zhu, T., and Lou, J., “Fracture toughness of graphene,” Nature Communications, vol. 5, p. 3782, 2013.CrossRefGoogle Scholar
Gu, P. and Tani, M., “Terahertz Radiation from Semiconductor Surfaces,” in Terahertz Optoelectronics, Heidelberg, Springer-Verlag Berlin Heidelberg, 2005, pp. 63–97.CrossRefGoogle Scholar
Nakajima, M., Hangyo, M., Ohta, M., and Miyazaki, H., “Polarity reversal of terahertz waves radiated from semi-insulating InP surfaces induced by temperature,” Physical Review B, vol. 67, p. 195308, 2003.CrossRefGoogle Scholar
Nakajima, M., Oda, Y., and Suemoto, T., “Competing terahertz radiation mechanisms in semi-insulating InPat high-density excitation,” Applied Physics Letters, vol. 85, p. 2694, 2004.CrossRefGoogle Scholar
Nakajima, M. and Hangyo, M., “Study of THz radiation from semiconductor surfaces excited by femtosecond laser pulses,” Semiconductor Science and Technology, vol. 19, pp. S264–S266, 2004.CrossRefGoogle Scholar
Gu, P., Tani, M., Kono, S., Sakai, K., and Zhang, X.-C., “Study of terahertz radiation from InAs and InSb,” Journal of Applied Physics, vol. 91, p. 5533, 2002.CrossRefGoogle Scholar
Molis, G., Adomavičius, R., and Krotkus, A., “Temperature-dependent terahertz radiation from the surfaces of narrow-gap semiconductors illuminated by femtosecond laser pulses,” Physica B, vol. 403, p. 3786–3788, 2008.CrossRefGoogle Scholar