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Laser Synthesis of Sn-Ge-Sb-Te Phase Change Materials

Published online by Cambridge University Press:  01 February 2011

Wendong Song ,
L.P. Shi ,
X.S. Miao  and
T.C. Chong
Wendong Song
Affiliation:
[email protected], Data Storage Institute, Optical materials & system, DSI Building 5, Engineering Drive 1, Singapore, Singapore, 117608, Singapore
L.P. Shi
Affiliation:
[email protected], Data Storage Institute, DSI Building 5, Engineering Drive 1, Singapore, 117608, Singapore
X.S. Miao
Affiliation:
[email protected], Data Storage Institute, DSI Building 5, Engineering Drive 1, Singapore, 117608, Singapore
T.C. Chong
Affiliation:
[email protected], Data Storage Institute, DSI Building 5, Engineering Drive 1, Singapore, 117608, Singapore
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Abstract

Sn-doped Ge-Sb-Te films on Si substrates were prepared by laser synthesis at the different growth temperatures. The compositions of Sn-doped Ge-Sb-Te films were analysized by X-ray photoelectron spectroscopy. The crystal structures of Sn-doped Ge-Sb-Te thin films with a Sn content of less than 30 at% are close to Ge2Sb2Te5. The crystallization behaviors of Sn-doped Ge-Sb-Te films were analyzed by self-developed phase change temperature tester. The crystallization temperatures of Sn4.3Ge32.9Sb28.1Te34.6, Sn9.8Ge20.3Sb28.4Te41.5 and Sn18.8Ge19.5Sb25.3Te36.4 are 141.5, 137.3 and 135.0 °C at a ramp rate of 20 °C/min, respectively. Doping Sn into Ge-Sb-Te will result in a decrease of crystallization temperature. It was also found that crystallization temperature increases with an increase of ramp rate for a phase change material. The activity energy Ea and frequency factor ¦Ô for Sn9.8Ge20.3Sb28.4Te41.5 thin films are 2.42 eV and 1.7 × 1026 Hz, respectively. The crystallization speed of Sn-doped Ge-Sb-Te is estimated to be faster than Ge2Sb2Te5.

Keywords

laser ablationphase transformationoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006 , 0918-H08-03
Copyright
Copyright © Materials Research Society 2006

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References

1. Lie, C.T., Kuo, P.C., Hsu, W.C., Wu, T.H., Chen, P.W. and Chen, S.C., Jpn. J. Appl. Phys. 42, 1026 (2003).Google Scholar
2. Her, Y.C. and Hsu, Y.S., Jpn. J. Appl. Phys, 42, 804 (2003).Google Scholar
3. Friedrich, I., Weidenhof, V., Njoroge, W., Rranz, P. and Wuttig, M., J. Appl. Phys. 87, 4130 (2000).Google Scholar
4. Trappe, C., Bechevet, B., Facsko, S. and Kurz, H., Jpn. J. Appl. Phys. 37, 2114 (1998).Google Scholar
5. Abu-Sehly, A.A., Physica B, 325, 372 (2003).Google Scholar
6. Aziz, M.M. and Wright, C.D., J. Appl. Phys. 97, 103537 (2005).Google Scholar
7. Weinberg, M. C., J. Non-Cryst. Solids, 127, 151 (1991).Google Scholar
8. Chen, Y.C., Chen, C.T., Yu, J.Y., Lee, C.Y., Chen, C.F., Lung, S.L. and Liu, R., IEEE. Custom Integrated Circuits Conference, 395 (2003).Google Scholar