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Laser Spectroscopic Investigation of Gas-Phase Processes Relevant to Semiconductor Device Fabrication

Published online by Cambridge University Press:  15 February 2011

R. F. Karlicek Jr. ,
V. M. Donnelly  and
W. D. Johnston Jr.
R. F. Karlicek Jr.
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
V. M. Donnelly
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
W. D. Johnston Jr.
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Chemical vapor deposition (CVD) and plasma etching are important gas-phase techniques used in fabricating semiconductor devices. These processes frequently involve poorly understood multicomponent gas-phase reactions which control reproducibility and product quality. Laser spectroscopic techniques have recently been developed to investigate CVD and plasma etching. These methods offer several advantages for probing complex systems. A comparison of various probing techniques will be presented, and recent results of laser spectroscopic investigations of plasma etching and CVD of silicon and III-V compounds will be reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 151
Copyright
Copyright © Materials Research Society 1983

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References

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