Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T15:44:21.461Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Recrystallization of Mocvd Poly-Gaas on Insulating Substrates

Published online by Cambridge University Press:  28 February 2011

X.M. Bao ,
X.F. Huang ,
P. Han  and
J.M. Yin
X.M. Bao
Affiliation:
Department of Physics, Nanjing University, Nanjing, P.R.China
X.F. Huang
Affiliation:
Department of Physics, Nanjing University, Nanjing, P.R.China
P. Han
Affiliation:
Department of Physics, Nanjing University, Nanjing, P.R.China
J.M. Yin
Affiliation:
Department of Physics, Nanjing University, Nanjing, P.R.China
Get access

Abstract

Poly-GaAs films have been grown on amorphous insulating substrates by MOCVD technique. The films were analyzed using TEM, X-ray diffraction, AES and ESCA measurements. The results show that poly-GaAs films are flat, bright and close in texture and stoichiometric. The grain size is about 200Å. The film contains trace impurities such as Si,O and C. They are evenly distributed in the film. The poly-GaAs films were crystallized by CW Ar+ laser with a increase of grain size from 200Å to 40 µm. Schottky barrier diodes of good I-V characteristics were made on the laser recrystallized GaAs films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 107
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Gibbons, J.F. and Lee, K.F., IEEE Electron Devices Lett. EDL–1, 6117 (1980)Google Scholar
(2) Geis, M.W., Smith, Henry I., Tsaur, B.Y., Fan, J.C.C.. Silversmith, D.J.. Mountain, R.W. and Chapman, R.L., Laser-Solid Interactions and Transient Thermal Processing of Materials, Narayan, J., Borown, W.L. and Lemons, P.A. eds., (North-Holland N.Y. 1983) p.477Google Scholar
(3) Manasevit, H.M. and Simpson, W.I., J.Electrochem. Soc. 116 1725 (1969).Google Scholar
(4) Miller, R.C., Dupuis, R.D. and Petroff, P.M., Apol. Phys. Lett. 44 508 (1984).Google Scholar
(5) Handbook of X-ray Photoelectron Spectroscopy Physical Electronics Division, Perkin Elmer Co. (1979).Google Scholar