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Laser Processing of Porous Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
Silicon can be prepared in a unique morphological form by anodic dissolution in HF. The resultant material contains pores of 10–100Å diameter in numbers sufficient toproduce a high surface area, low density single crystal. We have investigated the potential of both pulsed and CW laser processing in this material for dielectric isolation applications. Pulsed processing at λ = 532 nm yields fused surface layer structures that are epitaxial. The porous Si that underlies this surface film is undisturbed and can beoxidized to produce vertical isolation from the substrate.
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- Copyright © Materials Research Society 1982
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