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Laser Power and Temperature Dependent Photoluminescence Characteristics of Annealed GaInNAs/GaAs Quantum Well

Published online by Cambridge University Press:  01 February 2011

Ng Tien Khee ,
Yoon Soon Fatt  and
Fan Weijun
Ng Tien Khee
Affiliation:
School of Electrical and Electronic Engineering (Block S1), Nanyang Technological University Nanyang Avenue, Singapore 639798. Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
Yoon Soon Fatt
Affiliation:
School of Electrical and Electronic Engineering (Block S1), Nanyang Technological University Nanyang Avenue, Singapore 639798. Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
Fan Weijun
Affiliation:
School of Electrical and Electronic Engineering (Block S1), Nanyang Technological University Nanyang Avenue, Singapore 639798.
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Abstract

Photoluminescence (PL) of annealed GaInNAs quantum well (QW) with varying temperature and laser excitation intensity is measured to understand the low temperature PL properties of annealed 6 nm GaInNAs QW. The measurements show that localization effect still exist in the QW even after annealing. This effect is characterized by an activation energy of 11 meV below the e1 state, which is obtained from fitting the integrated PL intensity vs. temperature curve with a single-activation-energy (SAE) model. This center is suggested to be related to the main localization center below the e1 state that could be resulted by N or In compositional fluctuation even after annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z5.15
Copyright
Copyright © Materials Research Society 2004

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References

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