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Laser Irradiation of InSb:Ge Thin Films

Published online by Cambridge University Press:  21 February 2011

K. A. Rubin ,
C. Ortiz ,
J. Solis  and
K. Roche
K. A. Rubin
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
C. Ortiz
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
J. Solis
Affiliation:
Permanent Address: I. Optica, CSIC, Serrano 121, Madrid 28006
K. Roche
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
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Abstract

The effect of 647nm Kr-ion laser and 514.5 nm Ar-ion irradiation on 1 and 7 μm diameter regions, respectively, of (In43Sb57)87 Ge13 thin alloy films was determined. Laser irradiation times of 50ns - 20μs produce different reflectivity states. An amorphous state of increased reflectivity with respect to the as-deposited amorphous state was produced only with the smaller beam after short pulse (∼100ns to ∼500ns) laser irradiation. Slightly longer pulses caused formation of surface corrugations. The corrugation morphology occurred in the nanosecond regime both in air and vacuum. Further laser annealing caused crystallization and decreased reflectivity. The crystallization microstructures were random cellular for the irradiation in air. Irradiation in vacuum produced three, distinct concentric structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 129
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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