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Laser Induced Temperature Rise In Semiconductors : Analytical Solutions, Application to the Transient

Published online by Cambridge University Press:  15 February 2011

Alain Maruani ,
Y.I. Nissim ,
F. Bonnouvrier  and
D. Paquet
Alain Maruani
Affiliation:
Centre National d'Etudes des Télécommunications*, 196 rue de Paris 92220 BAGNEUX (FRANCE)
Y.I. Nissim
Affiliation:
Centre National d'Etudes des Télécommunications*, 196 rue de Paris 92220 BAGNEUX (FRANCE)
F. Bonnouvrier
Affiliation:
Centre National d'Etudes des Télécommunications*, 196 rue de Paris 92220 BAGNEUX (FRANCE)
D. Paquet
Affiliation:
Centre National d'Etudes des Télécommunications*, 196 rue de Paris 92220 BAGNEUX (FRANCE)
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Abstract

It is shown how the systematic use of the method of integral transforms greatly simplifies the calculation of the temperature rises in laser irradiated media. In general, this method leads ultimately either to analytical results or to very simple numerical integrals (e.g. no poles, exponential kernels). We focus here on the analytical results, and discuss some aspects of CW laser heating, for large surface absorption, including radial dependance, depth dependance and transient nonlinearities. The new results derived in this treatment are in good agreement with experimental data from other studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 123
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Laboratoire associé au CNRS (LA250)

References

REFERENCES

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