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Laser Direct-Metallization of Silicon Carbide without Metal Deposition

Published online by Cambridge University Press:  01 February 2011

I.A. Salama ,
A. Kar  and
N.R. Quick
I.A. Salama
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMP) School of Optics/CREOL, University of Central Florida Orlando, FL 32816-2700, USA
A. Kar
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMP) School of Optics/CREOL, University of Central Florida Orlando, FL 32816-2700, USA
N.R. Quick
Affiliation:
AppliCote Associates, LLC, 894 Silverado Court Lake Mary, FL 32746, USA
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Abstract

Laser direct-write (LDW) is used for in-situ metallization in single crystal 4H- and 6H-SiC wafers without metal deposition. Nanosecond-pulsed Nd:YAG (λ= 1064 and 532 nm) and excimer (λ = 193, 248 and 351 nm) lasers are utilized to create metal-like conductive phases in both n-type and p-type SiC wafers. Frequency-doubled Nd:YAG irradiation(Ephoton < Eg) induces a carbon rich conductive phase due to thermal decomposition of SiC. However, pulsed excimer laser irradiation (Ephoton > Eg) produces a Si- rich conductive phases due to carbon photo ablation. The Schottky barrier heights (SBH) between the laser-metallized layer and the original n-type SiC (ND = 1018 cm-3) is determined to be 0.8 eV and 1.0 eV by the current-voltage and capacitance-voltage measurements at room temperature, respectively. Linear transmission line method pattern is directly fabricated in n-type doped (ND=1018cm-3) SiC substrate by pulsed laser irradiation allowing to extract the specific contact resistance (rc)of the laser fabricated metal-like tracks (rc= 0.04-0.12 Ωcm2).The specific contact resistance is unchanged after annealing up to 3 hrs at 950°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C2.10
Copyright
Copyright © Materials Research Society 2003

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References

1. Sze, S., (1981), Physics of Semiconductor Devices, John Wiley & Sons, New York. pp. 245–311.Google Scholar
2. Mott, N. F. (1938), The contact between a metal and an insulator or semiconductor. Cambridge Philosophical. Society, Vol.34 (1938), pp. 568–572.Google Scholar
3. Pengelly, R. (2000), Compound Semiconductor, Vol. 6 No.4.Google Scholar
4. Porter, L., Davis, R. (1995), A critical review of ohmic and rectifying contacts for silicon carbide. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology Vol. 34, No.(2-3), pp. 83–105.Google Scholar
5. Quick, N. R. (April 2000), US Patents No 6,054,375; (Feb. 2000), US Patents No. 6,025,607 (Nov. 1998), US Patents No. 5,837,607; (Sept. 1992), US Patents No. 5, 145, 741.Google Scholar
6. Salama, I. A., Quick, N. R. and Kar, A. (2002), Laser Microprocessing of Wide Bandgap Materials. Proceedings of International Congress on Laser Advanced Materials Processing (LAMP2002), Osaka Japan May 27-31. Published by The International Society for Optical Engineering, SPIE Vol. 4830/4831.Google Scholar
7. Salama, I.A. Ph.D. Thesis, University of Central Florida, Spring 2003.Google Scholar
8. Sengupta, D. K., Quick, N. R. and Kar, A. (2001), Laser conversion of electrical properties for silicon carbide device applications, Journal of Laser Applications(2001), 13(1), pp. 26–31.Google Scholar
9. Salama, I. A., Quick, N. R. and Kar, A. (2002) Laser-Fabricated Metal-Semiconductor Junctions on Silicon Carbide Substrates”, ICALEO 2002.Google Scholar