Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T07:46:54.709Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Direct Writing of Aluminum

Published online by Cambridge University Press:  26 February 2011

T. Cacouris ,
G. Scelsi ,
R. Scarmozzino ,
R.M. Osgood Jr.  and
R.R. Krchnavek
T. Cacouris
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
G. Scelsi
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R. Scarmozzino
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R.M. Osgood Jr.
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, N.Y. 10027
R.R. Krchnavek
Affiliation:
Bell Communications Laboratories, 435 South Str., Morristown, N.J. 07960
Get access

Abstract

We report, for the first time, laser direct writing of high conductivity aluminum interconnects from dimethylaluminum hydride (DMALH). These lines were deposited from a metallorganic gas with a focused deep-UV laser beam and were directly connected to aluminum test structures. Electrical measurements and Auger electron spectroscopy were used to characterize the laser deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 43
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kishida, S., Morishige, Y., Uesugi, F., Yokoyama, H., Technical Digest, CLEO 87, Baltimore, MD. April 1987, p. 282.Google Scholar
2 Gilgen, H.H., Cacouris, T., Shaw, P.S., Krchnavek, R.R., Osgood, R.M. Jr., Appl. Phys. B 42 (2), March 1987.Google Scholar
3 Gilgen, H.H., Krchnavek, R.R., Cacouris, T., Osgood, R.M. Jr., Proc. Materials Research Society, Boston, MA., Dec. 1985.Google Scholar
4 Krchnavek, R.R., Cacouris, T., Gilgen, H.H., Osgood, R.M. Jr., Proc. MRS, Boston, MA., Dec. 1985.Google Scholar
5 Lax, M., J. Appl. Phys. 48 (9) 3919 (1977).Google Scholar
6 Cacouris, T., Scelsi, G., Beach, R., Osgood, R.M. Jr., Krchnavek, R.R., Technical Digest, Postdeadline Papers, CLEO 87, Baltimore, MD. April 1987, p.289.Google Scholar
7 Wood, T.H., White, J.C., Thacker, B.A., Appl. Phys. Lett. 42(5), 408 (1983).Google Scholar
8 Cacouris, T., Krchnavek, R.R., Gilgen, H.H., Osgood, R.M. Jr., Proc. Int'l Electron Dev. Meeting, Washington, D.C., Dec. 1985, p. 594.Google Scholar