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Laser Direct Write and Gas Immersion Laser Doping Fabrication of SiC Diodes

Published online by Cambridge University Press:  15 March 2011

Z. Tian ,
N.R. Quick  and
A. Kar
Z. Tian
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMP) School of Optics/CREOL, University of Central Florida Orlando, FL 32816-2700, USA
N.R. Quick
Affiliation:
AppliCote Associates, LLC, 894 Silverado Court Lake Mary, FL 32746, USA
A. Kar
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMP) School of Optics/CREOL, University of Central Florida Orlando, FL 32816-2700, USA
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Abstract

Laboratory prototype SiC diodes are fabricated using a combination of gas immersion laser doping (GILD) and laser direct write (LDW) in situ metallization in a commercial SiC wafer. Trimethylaluminum (TMA) and nitrogen are the precursors used to produce p-type and n-type SiC, respectively. Using these techniques, a 150 nm p-type doped junction is fabricated in semiinsulating 6H-SiC and n-doped 4H-SiC wafers. Ohmic contacts are created by laser direct metallization producing carbon rich conductive phases in these doped materials. Alternatively an excimer laser can be used to create silicon rich Schottky contacts. The geometry of the diodes can be vertical or planar to the wafer surface and the laser processes are thought to reduce defect densities in the irradiated areas. These laser-processed diodes are intended for use in high temperature, high voltage and high frequency switching and sensing applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J3.4
Copyright
Copyright © Materials Research Society 2004

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