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Laser Deposited Cubic Boron Nitride Films

Published online by Cambridge University Press:  16 February 2011

Gary L. Doll ,
Jeffrey A. Sell ,
Lourdes Salamanca-riba  and
Ashwin K. Ballal
Gary L. Doll
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
Jeffrey A. Sell
Affiliation:
Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
Lourdes Salamanca-riba
Affiliation:
Dept. of Chem. and Nuc. Eng., University of Maryland, College Park, MD 20742–2115
Ashwin K. Ballal
Affiliation:
Dept. of Chem. and Nuc. Eng., University of Maryland, College Park, MD 20742–2115
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Abstract

We report the successful growth of cubic boron nitride thin films on single crystal 100 silicon by using pulsed excimer laser ablation of a hexagonal boron nitride bulk target. Optical emission spectra were obtained during the film deposition giving insight into the deposition mechanism. The deposited films were characterized by transmission electron microscopy, scanning electron microscopy, optical microscopy, x-ray diffraction, and Auger electron microscopy. Regions of the films were found to exhibit epitaxy with the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 191: Symposium N – Laser Ablation for Materials Synthesis , 1990 , 55
Copyright
Copyright © Materials Research Society 1990

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References

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