Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T17:45:26.544Z Has data issue: false hasContentIssue false

Laser Crystallization of Silicon Thin Films Using Photo Absorption Layer Formed by Spin Coating of Carbon Particles

Published online by Cambridge University Press:  01 February 2011

Nobuyuki Andoh
Affiliation:
[email protected], Tokyo University of Agri. and Tech., Faculty of Technology, 2-24-16, Naka-cho, Koganei, Tokyo, 184-8588, Japan, 81-42-388-7259, 81-42-388-7259
Masato Maki
Affiliation:
[email protected], Tokyo University of Agri. and Tech., Faculty of Technology, 2-24-16, Naka-cho, Koganei, Tokyo, N/A, Japan
Toshiyuki Sameshima
Affiliation:
[email protected], Tokyo University of Agri. and Tech., Faculty of Technology, 2-24-16, Naka-cho, Koganei, Tokyo, N/A, Japan
Naoki Sano
Affiliation:
[email protected], Hightec Systems Corporation, Shin Yokohama No.2 Center BLDG. 7F, 3-19-5, Shin Yokohama, Kohoku-ku, Yokohama, N/A, Japan
Get access

Abstract

We report crystallization of amorphous silicon films 50∼1400 nm thick formed on glass substrates by irradiation of an infrared semiconductor laser. Carbon particles with a mean diameter of 200 nm were uniformly coated on the silicon films as the optical absorption layer. Samples were irradiated with a 940-nm continuous wave (CW) semiconductor laser with a power of 20 W. A high optical absorbance 76.5% at 940 nm of the carbon particles layers resulted in annealing of silicon films by heat diffusion from the carbon particle layers. After removing the carbon particles layer, Raman scattering spectral measurements were carried out. A high scattering intensity and a sharp crystalline silicon phonon band were observed. The analysis of Raman spectra revealed a crystalline volume ratio almost 1.0. The analysis of the optical reflectivity spectra also revealed that the silicon films were crystallized in the whole thickness by the present method.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Uchikoga, S. and Ibaraki, N., Thin Solid Films, 383 19 (2001).Google Scholar
2. Inoue, S., Sadao, K., Ozawa, T., Kobashi, Y., Kwai, H., Kitagawa, T. and Shimoda, T., Tech. Dig. IEDM, 2000, p197.Google Scholar
3. Shibata, K. and Takahashi, H., Proc Int. Workshop on Active Matrix Liquid Crystal Displays'01 (Tokyo, Japan), 2001, p219.Google Scholar
4. Sameshima, T., Usui, S. and Sekiya, M., IEEE Electron Device Lett., 7 276 (1986).Google Scholar
5. Sera, K., Okumura, F., Uchida, H., Itoh, S., Kaneko, S. and Hotta, K., IEEE Trans. Electron Devices 36 2868(1989).Google Scholar
6. Serikawa, T., Shirai, S., Okamoto, A. and Suyama, S., Jpn. J. Appl. Phys., 28 L1871 (1989).Google Scholar
7. Kohno, A., Sameshima, T., Sano, N., Sekiya, M. and Hara, M., IEEE Trans. Electron Devices, 42 251 (1995).Google Scholar
8. Sameshima, T. and Andoh, N., in Kinetics-Driven Nanopatterning on Surfaces, edited by Eric, Chason, George, H. Gilmer, Hanchen, Huang, and Enge, Wang (Mater. Res. Soc. Symp. Proc. 849, Warrendale, PA, 2005), KK9.5.Google Scholar
9. Sameshima, T. and Andoh, N., Jpn. J. Appl. Phys., 44 7305 (2005).Google Scholar
10. Andoh, N., Sameshima, T., Maki, M. and Sano, N., Proc. of the 2nd International TFT Conference, pp.142 (2006, Kita-Kyushu, Japan).Google Scholar
11. Sano, N., Maki, M., Andoh, N. and Sameshima, T., in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology--2006, edited by Atwater, H.A. Jr, Chu, V., Wagner, S., Yamamoto, K., Zan, H-W. (Mater. Res. Soc. Symp. Proc. 910, Warrendale, PA, 2006), A14–02.Google Scholar
12. Sano, N., Maki, M., Andoh, N. and Sameshima, T., Proc. of 13th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), pp. 329 (2006, Tokyo, Japan).Google Scholar
13. Richter, H., Wang, Z.P., Ley, L., Solid State Commun., 39 625 (1981).Google Scholar
14. Viera, G., Huet, S., Boufendi, L., J. Appl. Phys., 90 4175 (2001).Google Scholar
15. Sameshima, T., Watakabe, H., Andoh, N. and Higashi, S., Thin Solid Films, 487 63 (2005).Google Scholar
16. Sameshima, T., Proc. In Mat. Res. Soc. Symp., 536 427 (1999).Google Scholar
17. Sameshima, T., Andoh, N. and Andoh, Y.: Jpn, J. Appl. Phys., 44 1186 (2005).Google Scholar