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Laser Annealing of GaP and GaAs in High-Pressure Argon Gas Ambients

Published online by Cambridge University Press:  22 February 2011

Fumio Sato ,
Tadasu Sunada  and
Jun-ichi Chikawa
Fumio Sato
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Tadasu Sunada
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
Jun-ichi Chikawa
Affiliation:
NHK Broadcasting Science Research Laboratories, 1–10–11, Kinuta, Setagaya-ku, Tokyo, 157, Japan
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Abstract

Pulsed laser annealing has been made for Te or Znimplanted GaP and Si-implanted GaAs in argon gas atmospheres in a pressure range of 1 to 1000 bar. Optical absorption measurement indicates that pulse annealing under pressures higher than 300 bar forms surface layers with a high crystallinity without appreciable evaporation of P or As. This pressure effect is discussed from the viewpoint of diffusion length of evaporated atoms during the annealing time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 645
Copyright
Copyright © Materials Research Society 1984

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References

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