Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T22:06:03.887Z Has data issue: false hasContentIssue false

Large Persistent Photochromic Effect Due to DX Centers in AlSb Doped with Selenium

Published online by Cambridge University Press:  26 February 2011

P. Becla
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science, Cambridge, MA 02139
A. G. Witt
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science, Cambridge, MA 02139
J. Lagowski
Affiliation:
University of South Florida, Center for Microelectronics Research, Tampa, FL 33620
W. Walukiewicz
Affiliation:
Lawrence Berkeley Laboratory, Materials Sciences Division, Berkeley, CA 94720
Get access

Abstract

A large photochromic effect has been observed in bulk AlSb crystals doped with Se. Illumination with the light of energy higher than 1 eV leads to an increase of the absorption coefficient in the spectral range 0.1 eV to 1.6 eV. The enhanced absorption is persistent at the temperatures below about 100 K. The effect is a manifestation of a DX-like bistability of Se donors. The illumination transfers the electrons from the DX center to a metastable hydrogenic level. The increased absorption with peaks around 0.2 eV and 0.5 eV is due to photoionization from the donor level to X1 and X3 minima of the conduction band

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lang, D.V. and Logan, R. A., Phys. Rev. Lett 39,635 (1977).Google Scholar
2. Chadi, D.J. and Chang, K. J., Phys. Rev. Lett. B40, 873 (1989).Google Scholar
3. Mooney, P.M., J. Appl. Phys. 67, Rl (1990).Google Scholar
4. Burkey, B.C., Khosla, R.P., Fischer, J.R. and Losee, D. L., J. Appl. Phys., 47, 1095 (1976).Google Scholar
5. Nolte, D.D., Olson, D.H. and Glass, A. M., Phys. Rev. B40,10650 (1989).Google Scholar
6. Linke, R.A., Thio, T., Chadi, J.D. and Devlin, G. E., Appl. Phys. Lett 65, 16 (1994).Google Scholar
7. Dmochowski, J.E., Langer, J.M., Raczynska, J. and Jantsch, W., Phys. Rev. B38, 3276 (1988).Google Scholar
8. Ahlburn, B.T. and Ramdas, A. K., Phys Rev. 167, 717 (1968).Google Scholar
9. Turner, W.J. and Reese, W. E., Phys. Rev. 117, 1003 (1960).Google Scholar
10. Nolte, D.D. and Glass, A. M., Opt and Quantum Elect. 22, S47 (1990).Google Scholar
11. Kogelnik, H., Bell Syst. Techn. J. 48, 2909 (1969).Google Scholar
12. McKenna, J., Nolte, D.D., Becla, P., and Walukiewicz, W. (to be published).Google Scholar