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Large Magnetoresistance Variation of Pseudo Spin Valves with Different Nano Oxide Layer Position

Published online by Cambridge University Press:  26 February 2011

Jeong Dae Suh  and
C.A. Ross
Jeong Dae Suh
Affiliation:
[email protected], Electronics and Telecommunications Research Institute, Medical Information Convergence Team, 138 Gajeongno, Daejeon, 305-350, Korea, Republic of
C.A. Ross
Affiliation:
[email protected], Massachusetts Institute of Technology, Depart of Materials Science and Engineering, 77 Massachusetts Ave., Cambridge, MA, 02139, United States
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Abstract

We have investigated the influence of the nano-oxide layer positions on giant magnetoresistance(GMR) of the NiFe(9nm)/Cu(4nm)/Co(5nm) pseudo spin valves. Nano-oxide layer positions had a several effects on the multilayer structure that changes its magnetotransport behavior. GMR ratio varied between 2.8% and 0.15% depending on the nano-oxide layer positions within the stack. The increase of the GMR ratio was accompanied by increase in resistance change, decrease in sheet resistance, and decrease in surface roughness. These significant variations of GMR ratio was explained by the changes on the spin dependent scattering or current shunting effect. Our results showed that appropriate placement of a nano-oxide layer was essential fo optimize magnetoresistance and properties of spin valves.

Keywords

spintronicmagnetoresistance (transport)magnetic properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1032: Symposium I – Nanoscale Magnetic Materials and Applications , 2007 , 1032-I14-36
Copyright
Copyright © Materials Research Society 2008

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