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A Large Grain Polycrystalline Silicon Film for Resistive Bolometers

Published online by Cambridge University Press:  01 February 2011

Tae-Sik Kim  and
Hee Chul Lee
Tae-Sik Kim
Affiliation:
Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST), 373–1, Kusong-dong, Yusong-gu, Taejon 305–701, Korea
Hee Chul Lee
Affiliation:
Department of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST), 373–1, Kusong-dong, Yusong-gu, Taejon 305–701, Korea
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Abstract

Large grain polycrystalline silicon films as a sensing material for infrared bolometers have been proposed and investigated. Using a seed selection through ion channeling technique, we have successfully increased the average grain size of polysilicon films up to 1670Å. The achieved TCR value at 20°C and grain boundary defect density of the film are found to be as high as -2.46%/K for a resistivity of 30Ωcm and to be about 1.752×1012/cm2, respectively. From the measurement of noise characteristics of the film, the value of k, 1/f noise parameter, is calculated to be 1.35×10-9. As a result, the estimated detectivity is found to be 5.6×108cmHz1/2/W.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 785: Symposium D – Materials and Devices for Smart Systems , 2003 , D14.6
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Kruse, Paul W., Skatrud, David D., Semiconductors and Semimetals (San Diego: Academic press 1997), vol. 47, pp. 51–55.Google Scholar
2. Lu, C., Lu, N.C., Wang, C., Solid-St. Electron 27, 463 (1984).10.1016/0038-1101(84)90154-0Google Scholar
3. Lu, N.C., Gerzberg, L., Lu, C., Meindl, J.D., IEEE Trans. Electron Devices, vol. ED–30, 137 (1983).10.1109/T-ED.1983.21087Google Scholar
4. Sato, H., Proceedings of Noise in Physical Systmes and 1/f Noise, 89 (1983).Google Scholar
5. Lu, N.C., Gerzberg, L., Lu, C., Meindl, J.D., IEEE Trans. Electron Devices, vol. ED–28, 818 (1981).10.1109/T-ED.1981.20437Google Scholar
6. Reif, R., Knott, J.E., Electronics Lett. 17, 586 (1981).10.1049/el:19810413Google Scholar
7. Joshi, D.P., Solid-St. Electron. 29, 19 (1986).10.1016/0038-1101(86)90192-9Google Scholar