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Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Temperatures Less Than 250°C

Published online by Cambridge University Press:  15 February 2011

E. Srinivasan ,
S. J. Ellis ,
R. J. Nemanich  and
G. N. Parsons
E. Srinivasan
Affiliation:
Dept. of Chemical Engineering, N.C. State University, Raleigh, NC 27695
S. J. Ellis
Affiliation:
Dept. of Chemical Engineering, N.C. State University, Raleigh, NC 27695
R. J. Nemanich
Affiliation:
Dept. of Physics, N.C. State University, Raleigh, NC 27695
G. N. Parsons
Affiliation:
Dept. of Chemical Engineering, N.C. State University, Raleigh, NC 27695
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Abstract

A pulsed-gas intermittent deposition technique is used to deposit high crystallinity hydrogenated micro- or poly-crystalline silicon using silane and hydrogen. This method has been used to deposit crystallites that are comparable to those obtained using PECVD of fluorinated silanes. RHEED and TEM have been used to understand the nucleation process. The pulsed-gas method is promising for depositing polycrystalline silicon and subsequent use in thin film transistor applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 989
Copyright
Copyright © Materials Research Society 1997

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References

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