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Large Area Cu(In,Ga)Se2 Films and Devices on Flexible Substrates Made by Sputtering

Published online by Cambridge University Press:  01 February 2011

Dennis R. Hollars ,
Randy Dorn ,
P. D. Paulson ,
Jochen Titus  and
Robert Zubeck Miasolé
Dennis R. Hollars
Affiliation:
San Jose, CA 95131, U.S.A.
Randy Dorn
Affiliation:
San Jose, CA 95131, U.S.A.
P. D. Paulson
Affiliation:
San Jose, CA 95131, U.S.A.
Jochen Titus
Affiliation:
San Jose, CA 95131, U.S.A.
Robert Zubeck Miasolé
Affiliation:
San Jose, CA 95131, U.S.A.
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Abstract

A reactive sputtering process was developed for the production of Cu(In,Ga)Se2 films on a moving stainless steel substrate, in simulation of the operation of a roll coater. Cu, In and Ga fluxes were provided through magnetron sputtering and were reacted in a flux of Se on the heated substrate. CdS films were deposited either by chemical bath deposition (CBD) or by sputtering. Devices of the type steel/Cr/Mo/CIGS/CdS/ZnO/Ag were completed by sputtering ZnO layers and by screen printing grid lines. We made devices with efficiency values above 9%. A uniformity study was performed on a CIGS film and on small area devices made from it. The target length was 12”. Targets of this size are expected to produce a uniformly thick deposit over a range of 6-8”. The film thickness was 2.54 μm over a range of 6” with a standard deviation ó of 0.04 μm. The film composition was uniform over a range of 16”. The values of Cu/III and Ga/III were 0.84 and 0.31, with ó values of 0.02 and 0.01, respectively. The efficiency of allsputtered devices was uniform over a range of 12”, well beyond the 6” wide range of constant CIGS film thickness. Their efficiency was 6.6% on average with ó=0.6%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.34
Copyright
Copyright © Materials Research Society 2005

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