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Large Area Cu(In,Ga)Se2 Films and Devices on Flexible Substrates Made by Sputtering

Published online by Cambridge University Press:  01 February 2011

Dennis R. Hollars ,
Randy Dorn ,
P. D. Paulson ,
Jochen Titus  and
Robert Zubeck Miasolé
Dennis R. Hollars
Affiliation:
San Jose, CA 95131, U.S.A.
Randy Dorn
Affiliation:
San Jose, CA 95131, U.S.A.
P. D. Paulson
Affiliation:
San Jose, CA 95131, U.S.A.
Jochen Titus
Affiliation:
San Jose, CA 95131, U.S.A.
Robert Zubeck Miasolé
Affiliation:
San Jose, CA 95131, U.S.A.
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Abstract

A reactive sputtering process was developed for the production of Cu(In,Ga)Se2 films on a moving stainless steel substrate, in simulation of the operation of a roll coater. Cu, In and Ga fluxes were provided through magnetron sputtering and were reacted in a flux of Se on the heated substrate. CdS films were deposited either by chemical bath deposition (CBD) or by sputtering. Devices of the type steel/Cr/Mo/CIGS/CdS/ZnO/Ag were completed by sputtering ZnO layers and by screen printing grid lines. We made devices with efficiency values above 9%. A uniformity study was performed on a CIGS film and on small area devices made from it. The target length was 12”. Targets of this size are expected to produce a uniformly thick deposit over a range of 6-8”. The film thickness was 2.54 μm over a range of 6” with a standard deviation ó of 0.04 μm. The film composition was uniform over a range of 16”. The values of Cu/III and Ga/III were 0.84 and 0.31, with ó values of 0.02 and 0.01, respectively. The efficiency of allsputtered devices was uniform over a range of 12”, well beyond the 6” wide range of constant CIGS film thickness. Their efficiency was 6.6% on average with ó=0.6%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.34
Copyright
Copyright © Materials Research Society 2005

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References

1 Rockett, A., Lommasson, T. C., Yang, L. C., Talieh, H., Campos, P., and Thornton, J. A., Proc. 20th IEEE PVSC (1988), p. 1505.Google Scholar
2 Talieh, H. and Rockett, A., Solar Cells 27, 312 (1989).Google Scholar
3 Tseng, B.H., Rockett, A., Lommasson, T. C., Yang, L. C., Wert, C. A., and Thornton, J. A., J. Appl. Phys. 67, 2637 (1990).Google Scholar
4 Yang, L. C., Chou, L. J., Agarwal, A., and Rockett, A., Proc. 22nd IEEE PVSC (1991), p. 1185.Google Scholar
5 Hanket, G. M., Paulson, P. D., Singh, U., Junker, S. T., Birkmire, R. W., Doyle, F. J. III, Eser, E., and Shafarman, W. N., Proc. 28th IEEE PVSC (2000), p. 499.Google Scholar
6 Wiedeman, S., Beck, M. E., Butcher, R., Repins, I., Gomez, N., Joshi, B., Wendt, R. G., and Britt, J. S., Proc. 29th IEEE PVSC (2002), p. 575.Google Scholar
7 Hartmann, M., Schmidt, M., Jasenek, A., Schock, H.W., Kessler, F., Herz, K., and Powalla, M., Proc. 28th IEEE PVSC (2000), p. 638.Google Scholar
8 Satoh, T., Hashimoto, Y., Shimikawa, S.I., Hayashi, S., and Negami, T., Proc. 28th IEEE PVSC (2000), p. 567.Google Scholar
9 Arya, R. R., Lommasson, T. C., Wiedeman, S., Russel, L., Skibo, S., and Fogleboch, J., Proc. 23rd IEEE PVSC (1993), p. 516.Google Scholar
10 Kessler, J., Chityuttakan, C., Schöldström, J., and Stolt, L., Thin Solid Films 431-432, 1 (2003).Google Scholar