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Large Area (100)CdTe and CdZnTe Layers on (100)GaAs Grown by Hot Wall Beam Epitaxy for Hgcdte Photovoltaic MWIR-Detectorarray Application

Published online by Cambridge University Press:  25 February 2011

J. Humenberger ,
K.H. Gresslehner ,
W. Schirz ,
K. Lischka  and
H. Sitter
J. Humenberger
Affiliation:
TOPLAB, a Division of HAINZL Industriesysteme, Industriezeile 56, A–4020 Linz, Austria
K.H. Gresslehner
Affiliation:
TOPLAB, a Division of HAINZL Industriesysteme, Industriezeile 56, A–4020 Linz, Austria
W. Schirz
Affiliation:
TOPLAB, a Division of HAINZL Industriesysteme, Industriezeile 56, A–4020 Linz, Austria
K. Lischka
Affiliation:
Research Institute for Optoelectronics, Linz University, A–4040 Linz, Austria
H. Sitter
Affiliation:
Research Institute for Optoelectronics, Linz University, A–4040 Linz, Austria
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Abstract

The newly developed Hot Wall Beam Epitaxy was used for the growth of (100)CdTe and (100)Cd1-yZnyTe layers (y ∼ 0.04) on 1 inch (100)GaAs wafers. The structural properties of the epilayers were investigated by means of high resblution x-ray rocking curve measurements. The results demonstrate the high crystalline perfection of the layers. The CdTe and Cd1-yZnyTe/GaAs wafers were used as substrates for the growth of Hg1-xCdx Te by close space vapor phase epitaxy. The layers show excellent homogeneity. Across a 1 inch wafer the composition x varies by ±0.0026, and the width of the rocking curve (FWHM) by ±10arcsec. Values of the FWHM as low as 50arcsec for Hg1-xCdxTe (x = 0.32) on Cd1-yZnyTe/GaAs were obtained. Linear arrays of planar photovoltaic detectors were fabricated. Arrays of 32 elements show high uniformity of the cutoff wavelength and the responsivity. The variation of the cutoff wavelength is ±1.5% (±0.04μm) and the variation of the responsivity is ±3%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 53
Copyright
Copyright © Materials Research Society 1991

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References

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