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KrF Laser-Induced Chemical Vapor Deposition of Diamond

Published online by Cambridge University Press:  26 February 2011

George W. Tyndall  and
Nigel P. Hacker
George W. Tyndall
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
Nigel P. Hacker
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099
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Abstract

A KrF* (248 nm) laser-based process for the deposition of carbon films containing a large fraction of diamond is reported. The experiment consists of focusing the pulsed laser beam at normal incidence onto the surface of a low temperature (20° - 150° C) silicon substrate in the presence of acetic or malonic acid vapor. The process does not require the presence of hydrogen, although an inert buffer gas, e. g. argon, is usually employed. Deposition rates of approximately 1 μm - hour−1 are obtained, and the presence of diamond in the deposited film is inferred from Raman Spectroscopy and Auger Electron Spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 173
Copyright
Copyright © Materials Research Society 1990

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References

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