Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T10:24:33.707Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetics of Vacancy Ordering in YSi2−x Thin Film on Silicon

Published online by Cambridge University Press:  15 February 2011

T. L. Lee ,
L. J. Chen  and
F. R. Chen
T. L. Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
F. R. Chen
Affiliation:
Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

High resolution and conventional transmission electron microscopy have been applied to study the interfacial reaction of yttrium thin films on Si. Epitaxial Ysi2−x film was grown on (111)Si by rapid thermal annealing at 500–1000 °C. The orientation relationship between yttrium silicide and (111)Si was determined to be [0001]Ysi2−x//[111]Si and (1010)Ysi2−x//(112)Si. The vacancies in the Ysi2−x film were found to be ordered in the Si sublattice plane and form an out-of-step structure. The range of M values of the out-of-step structure was found to narrow with annealing temperature and time. Defects along specific crystallographic directions were observed and analyzed to be intrinsic stacking faults.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 157
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Knapp, J.A. and Picraux, S.T., Appl. Phys. Lett. 48, 466 (1986).Google Scholar
2. Baglin, J.E.E., d'Heurle, F.M., and Petersson, C.S., J. Appl. Phys. 52, 2841 (1981).Google Scholar
3. Tu, K.N., Thomson, H.D., and Tsaur, B.Y., Appl. Phys. Lett. 38, 626 (1981).Google Scholar
4. Thompson, R.D., Tsaur, B.Y., and Tu, K.N., Appl. Phys. Lett. 38, 535, (1981).Google Scholar
5. Baglin, E.E., d'Heurle, F.M., and Petersson, C.S., Appl. Phys. Lett. 36, 594 (1980).Google Scholar
6. Knapp, J.A., Picraux, S.T., Wu, C.S., and Lau, S.S., Appl. Phys. Lett. 44, 747 (1984).Google Scholar
7. Knapp, J.A., Picraux, S.T., Wu, C.S., and Lau, S.S., J. Appl. Phys. 58, 3747 (1985).Google Scholar
8. Norde, H., Pires, J. de Sousa, d'Heurle, F.M., Pasavento, F., Petersson, C.S., and Tove, P.A., Appl. Phys. Lett. 38, 865 (1981).Google Scholar
9. Gurvitch, M., Levi, A.F.J., Tung, R.T., and Nakahara, S., Appl. Phys. Lett. 51, 311 (1987).Google Scholar
10. Baptist, R., Ferrer, S., Grenet, G., and Poon, H.C., Phys. Rev. Lett. 64, 311 (1990).Google Scholar
11. Ogawa, S. and Watanabe, D., J. Phys. Soc. Japan, 9, 475 (1954).Google Scholar
12. Ogawa, S., Watanabe, D., Watanabe, H., and Komoda, T., Acta Cryst. 11, 872 (1958).Google Scholar
13. Fujiwara, K., J. Phys. Soc. Japan, 12, 7 (1957)Google Scholar
14. Sato, R. and Dio, H., Acta Cryst. 14, 763 (1961).Google Scholar