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Published online by Cambridge University Press: 03 September 2012
Time resolved reflectivity curves (TRR) in combination with non-equilibrium thermal model are used to estimate the temperature interval of chemical reactions in the systems Ni-Si (100) and Ni-SiO2-Si (100) for a ∼ 500 nm thick Ni layer depending on the pulse energy density ranging from 0.5 J/cm 2 to 1.0 J/cm2. Numerical simulations are performed to calculate the temperature field within the system and to analyze the reactivity of the system.