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Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO2 Layers

Published online by Cambridge University Press:  17 March 2011

Sabina Spiga ,
Sandro Ferrari ,
Marco Fanciulli ,
Bernd Schmidt ,
Karl-Heinz Heinig ,
Rainer Grötzschel ,
Arndt Mücklich  and
Giuseppe Pavia
Sabina Spiga
Affiliation:
Laboratorio MDM-INFM, via C. Olivetti 2, I-20041 Agrate Brianza, Italy
Sandro Ferrari
Affiliation:
Laboratorio MDM-INFM, via C. Olivetti 2, I-20041 Agrate Brianza, Italy
Marco Fanciulli
Affiliation:
Laboratorio MDM-INFM, via C. Olivetti 2, I-20041 Agrate Brianza, Italy
Bernd Schmidt
Affiliation:
Research Center Rossendorf, Institute of Ion Beam Physics, P.O. Box 510 119, D-01314 Dresden, Germany
Karl-Heinz Heinig
Affiliation:
Research Center Rossendorf, Institute of Ion Beam Physics, P.O. Box 510 119, D-01314 Dresden, Germany
Rainer Grötzschel
Affiliation:
Research Center Rossendorf, Institute of Ion Beam Physics, P.O. Box 510 119, D-01314 Dresden, Germany
Arndt Mücklich
Affiliation:
Research Center Rossendorf, Institute of Ion Beam Physics, P.O. Box 510 119, D-01314 Dresden, Germany
Giuseppe Pavia
Affiliation:
STMicroelectronics, via C. Olivetti 2, I-20041 Agrate Brianza, Italy
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Abstract

In this work we investigate the ion beam synthesis of Sn and Sb clusters in thin oxides. 80 keV (fluences of 0.1-1 × 1016 cm−2) Sn implantation in 85 nm thick SiO2, followed by annealing (800-1000°C for 30-300 sec under Ar or N 2 dry ambient) in a rapid thermal processing (RTP) system, leads to the formation of two cluster bands, near the middle of the SiO2 layer and the Si/SiO2 interface. In addition, big isolated clusters are randomly distributed between the two bands. Cluster-size distribution and cluster-crystallinity are related to implantation fluence and annealing time. Low energy (10-12 keV) Sb and Sn implantation (fluences 2-5 × 1015 cm−2) leads to the formation of very uniform cluster-size distribution. Under specific process conditions, only an interface cluster band is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O11.23
Copyright
Copyright © Materials Research Society 2001

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