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Kinetics of Cu Segregation in Al-Cu(1at% Cu) Interconnects Studied by Resistance Measurements

Published online by Cambridge University Press:  10 February 2011

A. J. Kalkman ,
A. H. Verbruggen ,
G. C. A. M. Janssen  and
S. Radelaar
A. J. Kalkman
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
A. H. Verbruggen
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
G. C. A. M. Janssen
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
S. Radelaar
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
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Abstract

The time-dependence of the growth of Al2Cu precipitates in Al-Cu(lat% Cu) thin films is studied by means of resistance measurements at different temperatures. The samples are annealed at 400°C for 1 hour, and then quickly cooled down to room temperature. Afterwards, the samples are heated within one minute to a measurement temperature between 140 °C and 240 °C. Growth of precipitates causes a well defined decrease in resistance. The observed resistance decrease does not follow an exponential decay. In the investigated temperature range the resistance decrease can be accurately modelled by (R(t)-R∞) = (Ro-R∞)exp(-(t /τ)n), with the time constant τ= τ0 exp(Ea / kT). Excellent fits were obtained resulting in n = 0.66±0.05, independent of temperature, and Ea= 0.81±0.03 eV. This value for the activation energy agrees very well with the activation energy that has been reported in literature for both electromigration failure in Al-Cu and grain-boundary diffusion of Cu in Al. The value we found for n is intriguingly close to 2/3 and deviates strongly from the values of n reported for bulk Al-Cu (n = 1.5–1.8) in the same temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 267
Copyright
Copyright © Materials Research Society 1997

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References

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