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Kinetics and Mechanism of the C49 to C54 Titanium Disilicide Phase Transformation in Nitrogen Ambient

Published online by Cambridge University Press:  15 February 2011

R. V. Nagabushnam ,
S. Sharan ,
G. Sandhu ,
V. R. Rakesh ,
R. K. Singh  and
P. Tiwari
R. V. Nagabushnam
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL-3261 1.
S. Sharan
Affiliation:
Process Development, Micron Semiconductor, Boise, Idaho-83705.
G. Sandhu
Affiliation:
Process Development, Micron Semiconductor, Boise, Idaho-83705.
V. R. Rakesh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL-3261 1.
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL-3261 1.
P. Tiwari
Affiliation:
Los Alamos National Laboratory, Los Alamos, New Mexico-87545.
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Abstract

The kinetics of the C49 to C54 TiSi2 phase transformation in nitrogen ambient have been investigated in a temperature range from 700 °C to 800 °C for a range of titanium film thicknesses (135 Å to 350 Å) using sheet resistance measurement, Auger electron spectroscopy(AES), Rutherford backscattering spectroscopy(RBS) and transmission electron microscopy(TEM). About 80% of the titanium converts to titanium silicide with the rest converting to titanium nitride. The activation energies obtained for the C49 to C54 transformation in nitrogen ambient are lower, at least by 2–2.25 eV, than that obtained for the transformations occuring either in argon ambient or vacuum environment. This has been explained with a model involving stress state of titanium silicide film with titanium nitride overlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 113
Copyright
Copyright © Materials Research Society 1996

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