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Kinetic Studies of Silicon - Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing

Published online by Cambridge University Press:  26 February 2011

Michael L. Reed  and
James D. Plummer
Michael L. Reed
Affiliation:
Integrated Circuits Laboratory, Center for Integrated Systems, Stanford University, Stanford, CA 94305.
James D. Plummer
Affiliation:
Integrated Circuits Laboratory, Center for Integrated Systems, Stanford University, Stanford, CA 94305.
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Abstract

Rapid thermal processing is a promising tool for studying the kinetics of interface state annealing and other process phenomena on short time scales. We have studied the decay of interface states with a variety of ambients, temperatures, and oxide thicknesses. Annealing kinetics appear to be controlled by a surface reaction process, and not hydrogen diffusion through the oxide. The annealing behavior depends strongly on temperature but less so on other process parameters. Our experimental methodology for temporal process modeling is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 333
Copyright
Copyright © Materials Research Society 1986

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References

[1] Ho, C.P., Hansen, S.E., Fahey, P.M., Stanford Electronics Laboratories Report No. SEL84-001, 1984.Google Scholar
[2] Chin, D., Oh, S., Dutton, R.W., IEEE Trans. Elect. Dev. ED–30 (9), 993, (1983).Google Scholar
[3] AG Associates, 1052 Elwell Ct., Palo Alto, CA.Google Scholar
[4] Deal, B.E., J. Elect. Soc. 121 (6), 198 (1974).Google Scholar
[5] Poindexter, E.H., Caplan, P.J., Deal, B.E., Razouk, R.R., J. Appl. Phys. 52 (2), 879 (1981).CrossRefGoogle Scholar
[6] Johnson, N.M., Biegelsen, D.K., Moyer, M.D., Chang, S.T., Poindexter, E.H., Caplan, P.J., Appl. Phys. Lett. 43 (6), 563 (1983).Google Scholar
[7] Deal, B.E., (private communication).Google Scholar
[8] Reed, M.L., Fishbein, B., Plummer, J.D., Appl. Phys. Lett. 47 (4), 400, (1985).Google Scholar
[9] Castagne, R. and Vapaille, A., Surf. Sci. 28, 157 (1971).Google Scholar
[10] Balk, P., Paper 109 presented at the 1965 Spring Meeting of the Electrochemical Society, Buffalo, NY.Google Scholar
[11] Schols, C., Maes, H., Declerck, G., Van Overstraeten, R., Rev. Phys. Appl. 13, 825 (1978).Google Scholar